NTD60N02R Specs and Replacement
Type Designator: NTD60N02R
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 58 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 33 nS
Cossⓘ - Output Capacitance: 480 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
Package: DPAK
NTD60N02R substitution
- MOSFET ⓘ Cross-Reference Search
NTD60N02R datasheet
ntd60n02r-035 ntd60n02r ntd60n02r.pdf
NTD60N02R Power MOSFET 62 A, 25 V, N-Channel, DPAK Features Planar HD3e Process for Fast Switching Performance http //onsemi.com Low RDS(on) to Minimize Conduction Loss Low Ciss to Minimize Driver Loss V(BR)DSS RDS(on) TYP ID MAX Low Gate Charge 25 V 8.4 mW @ 10 V 62 A Optimized for High Side Switching Requirements in High-Efficiency DC-DC Converters Pb-Free... See More ⇒
ntd60n03-001.pdf
NTD60N03 Power MOSFET 60 Amps, 28 Volts N-Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge http //onsemi.com circuits. V(BR)DSS RDS(on) TYP ID MAX Typical Applications 28 V 6.1 mW 60 A Power Supplies Converters N-Channel Power Motor Controls D Bridge Circuits MAXIMUM RATING... See More ⇒
Detailed specifications: SVF2N65F, TPHR8504PL, TSF65R300S1, UFZ24NL-TA3, UFZ24NL-TM3, UFZ24NL-TN3, NTD5865N-1G, NTD5867NL-1G, IRFP460, NTD60N02R-035, NTD60N03-001, NTD6414AN-1G, NTD6415AN-1G, NTD6416AN-1G, NTD65N03R, NTD65N03R-035, NTD65N03R-1G
Keywords - NTD60N02R MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: IPU06N03LA | HM4402B | H06N60E | R6024KNZ | 2SJ78
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