NTD6416AN-1G Specs and Replacement
Type Designator: NTD6416AN-1G
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 71 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 17 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 110 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.081 Ohm
Package: IPAK
NTD6416AN-1G substitution
- MOSFET ⓘ Cross-Reference Search
NTD6416AN-1G datasheet
ntd6416an-1g.pdf
NTD6416AN, NVD6416AN N-Channel Power MOSFET 100 V, 17 A, 81 mW Features Low RDS(on) High Current Capability http //onsemi.com 100% Avalanche Tested AEC Q101 Qualified - NVD616AN ID MAX These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX (Note 1) 100 V 81 mW @ 10 V 17 A MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) Parameter Symbol Value ... See More ⇒
ntd6416an nvd6416an.pdf
NTD6416AN, NVD6416AN MOSFET Power, N-Channel 100 V, 17 A, 81 mW Features http //onsemi.com Low RDS(on) High Current Capability ID MAX 100% Avalanche Tested V(BR)DSS RDS(on) MAX (Note 1) NVD Prefix for Automotive and Other Applications Requiring 100 V 81 mW @ 10 V 17 A Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These De... See More ⇒
ntd6416an.pdf
NTD6416AN N-Channel Power MOSFET 100 V, 17 A, 81 mW Features Low RDS(on) High Current Capability http //onsemi.com 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS ID MAX Compliant V(BR)DSS RDS(on) MAX (Note 1) MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 100 V 81 mW @ 10 V 17 A Parameter Symbol Value Unit Drain-to-Source ... See More ⇒
ntd6416anl.pdf
NTD6416ANL N-Channel Power MOSFET 100 V, 19 A, 74 mW Features Low RDS(on) http //onsemi.com High Current Capability 100% Avalanche Tested These are Pb-Free Devices V(BR)DSS RDS(on) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 100 V 74 mW @ 10 V 19 A Parameter Symbol Value Unit Drain-to-Source Voltage VDSS 100 V D Gate-to-Source Voltage - Continuo... See More ⇒
Detailed specifications: UFZ24NL-TN3, NTD5865N-1G, NTD5867NL-1G, NTD60N02R, NTD60N02R-035, NTD60N03-001, NTD6414AN-1G, NTD6415AN-1G, IRFB4110, NTD65N03R, NTD65N03R-035, NTD65N03R-1G, NTD6600N, NTD70N03R-001, NTD70N03RG, NTD78N03, NTD80N02
Keywords - NTD6416AN-1G MOSFET specs
NTD6416AN-1G cross reference
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History: SCT10N120 | NTD3055L170 | SI1077X | SI4405DY-T1 | SP632S | SED8830N | STFI15N60M2-EP
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