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NTD6416AN-1G MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NTD6416AN-1G
   Маркировка: 6416AN
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 71 W
   Предельно допустимое напряжение сток-исток |Uds|: 100 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 4 V
   Максимально допустимый постоянный ток стока |Id|: 17 A
   Максимальная температура канала (Tj): 175 °C
   Общий заряд затвора (Qg): 20 nC
   Время нарастания (tr): 22 ns
   Выходная емкость (Cd): 110 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.081 Ohm
   Тип корпуса: IPAK

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NTD6416AN-1G Datasheet (PDF)

 ..1. Size:137K  onsemi
 ntd6416an-1g.pdf

NTD6416AN-1G NTD6416AN-1G

NTD6416AN, NVD6416ANN-Channel Power MOSFET100 V, 17 A, 81 mWFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com 100% Avalanche Tested AEC Q101 Qualified - NVD616ANID MAX These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(on) MAX (Note 1)100 V 81 mW @ 10 V 17 AMAXIMUM RATINGS (TJ = 25C unless otherwise noted)Parameter Symbol Value

 5.1. Size:129K  onsemi
 ntd6416an nvd6416an.pdf

NTD6416AN-1G NTD6416AN-1G

NTD6416AN, NVD6416ANMOSFET Power,N-Channel100 V, 17 A, 81 mWFeatureshttp://onsemi.com Low RDS(on) High Current CapabilityID MAX 100% Avalanche TestedV(BR)DSS RDS(on) MAX (Note 1) NVD Prefix for Automotive and Other Applications Requiring100 V 81 mW @ 10 V 17 AUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable These De

 5.2. Size:141K  onsemi
 ntd6416an.pdf

NTD6416AN-1G NTD6416AN-1G

NTD6416ANN-Channel Power MOSFET100 V, 17 A, 81 mWFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSID MAXCompliantV(BR)DSS RDS(on) MAX (Note 1)MAXIMUM RATINGS (TJ = 25C unless otherwise noted)100 V 81 mW @ 10 V 17 AParameter Symbol Value UnitDrain-to-Source

 5.3. Size:149K  onsemi
 ntd6416anl.pdf

NTD6416AN-1G NTD6416AN-1G

NTD6416ANLN-Channel Power MOSFET100 V, 19 A, 74 mWFeatures Low RDS(on)http://onsemi.com High Current Capability 100% Avalanche Tested These are Pb-Free DevicesV(BR)DSS RDS(on) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)100 V 74 mW @ 10 V 19 AParameter Symbol Value UnitDrain-to-Source Voltage VDSS 100 VDGate-to-Source Voltage - Continuo

 5.4. Size:79K  onsemi
 ntd6416anl nvd6416anl.pdf

NTD6416AN-1G NTD6416AN-1G

NTD6416ANL, NVD6416ANLN-Channel Power MOSFET100 V, 19 A, 74 mWFeatures Low RDS(on)www.onsemi.com High Current Capability 100% Avalanche TestedV(BR)DSS RDS(on) MAX ID MAX NVD Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101100 V 74 mW @ 10 V 19 AQualified and PPAP Capable These Devices are Pb-Free

 5.5. Size:356K  cn vbsemi
 ntd6416ant.pdf

NTD6416AN-1G NTD6416AN-1G

NTD6416ANTwww.VBsemi.comN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ.) 100 % UIS tested0.055 at VGS = 10 V 250.057 at VGS = 4.5 V 100 25 21nC0.070 at VGS = 2.5 V 18APPLICATIONS Primary side switchDTO-252GG D SSN-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TA = 25 C, un

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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