All MOSFET. NTD65N03R-035 Datasheet

 

NTD65N03R-035 MOSFET. Datasheet pdf. Equivalent


   Type Designator: NTD65N03R-035
   Marking Code: 65N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 32 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 12.2 nC
   trⓘ - Rise Time: 18.6 nS
   Cossⓘ - Output Capacitance: 555 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0084 Ohm
   Package: DPAK

 NTD65N03R-035 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NTD65N03R-035 Datasheet (PDF)

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NTD65N03R-035 NTD65N03R-035

NTD65N03RPower MOSFET25 V, 65 A, Single N-Channel, DPAKFeatures Low RDS(on) Ultra Low Gate Chargehttp://onsemi.com Low Reverse Recovery Charge Pb-Free Packages are AvailableV(BR)DSS RDS(on) TYP ID MAXApplications6.5 mW @ 10 V25 V 65 A Desktop CPU Power9.7 mW @ 4.5 V DC-DC Converters High and Low Side SwitchN-ChannelDMAXIMUM RATINGS (TJ

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