NTD70N03R-001 Specs and Replacement
Type Designator: NTD70N03R-001
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 62.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 32 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 1.3 nS
Cossⓘ - Output Capacitance: 600 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: DPAK
NTD70N03R-001 substitution
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NTD70N03R-001 datasheet
ntd70n03r-001 ntd70n03rg ntd70n03r.pdf
NTD70N03R Power MOSFET 72 A, 25 V, N-Channel DPAK Features Planar HD3e Process for Fast Switching Performance http //onsemi.com Low RDS(on) to Minimize Conduction Loss Low CISS to Minimize Driver Loss V(BR)DSS RDS(on) TYP ID MAX Low Gate Charge 25 V 5.6 mW 72 A Pb-Free Packages are Available N-Channel MAXIMUM RATINGS (TJ = 25 C Unless otherwise specified) D P... See More ⇒
Detailed specifications: NTD60N03-001, NTD6414AN-1G, NTD6415AN-1G, NTD6416AN-1G, NTD65N03R, NTD65N03R-035, NTD65N03R-1G, NTD6600N, IRF3710, NTD70N03RG, NTD78N03, NTD80N02, NTD80N02-001, NTD80N02-1G, NTD80N02G, NTD80N02T4, NTD85N02R
Keywords - NTD70N03R-001 MOSFET specs
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