All MOSFET. NTD80N02 Datasheet

 

NTD80N02 Datasheet and Replacement


   Type Designator: NTD80N02
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 24 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 67 nS
   Cossⓘ - Output Capacitance: 900 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0058 Ohm
   Package: DPAK
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NTD80N02 Datasheet (PDF)

 ..1. Size:113K  onsemi
 ntd80n02-001 ntd80n02-1g ntd80n02t4 ntd80n02 ntd80n02g.pdf pdf_icon

NTD80N02

NTD80N02Power MOSFET24 V, 80 A, N-Channel DPAKDesigned for low voltage, high speed switching applications inpower supplies, converters and power motor controls and bridgecircuits.http://onsemi.comFeaturesV(BR)DSS RDS(on) TYP ID MAX These Devices are Pb-Free and are RoHS Compliant24 V 5.0 mW 80 ATypical Applications Power SuppliesN-Channel ConvertersD

 0.1. Size:118K  onsemi
 ntd80n02-d.pdf pdf_icon

NTD80N02

NTD80N02Power MOSFET24 V, 80 A, N-Channel DPAKDesigned for low voltage, high speed switching applications inpower supplies, converters and power motor controls and bridgecircuits.http://onsemi.comFeaturesV(BR)DSS RDS(on) TYP ID MAX These Devices are Pb-Free and are RoHS Compliant24 V 5.0 mW 80 ATypical Applications Power SuppliesN-Channel ConvertersD

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