All MOSFET. NTD85N02R-1G Datasheet

 

NTD85N02R-1G Datasheet and Replacement


   Type Designator: NTD85N02R-1G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 78.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 24 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 85 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 77 nS
   Cossⓘ - Output Capacitance: 871 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0052 Ohm
   Package: IPAK
 

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NTD85N02R-1G Datasheet (PDF)

 ..1. Size:76K  onsemi
 ntd85n02r-001 ntd85n02r-1g ntd85n02r ntd85n02rt4 ntd85n02r-d.pdf pdf_icon

NTD85N02R-1G

NTD85N02RPower MOSFET24 Volts, 85 AmpsSingle N-Channel,DPAK/IPAKhttp://onsemi.comFeatures Planar HD3e Process for Fast Switching PerformanceV(BR)DSS RDS(ON) MAX ID MAX Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses24 V 5.2 mW @ 10 V 85 A Low Gate Charge to Minimize Switching Losses Pb-Free Packages are AvailableN-Ch

 5.1. Size:83K  onsemi
 ntd85n02r.pdf pdf_icon

NTD85N02R-1G

NTD85N02RPower MOSFET85 Amps, 24 VoltsN-Channel DPAKFeatureshttp://onsemi.com Pb-Free Packages are Available Planar HD3e Process for Fast Switching Performance VDSS RDS(ON) TYP ID MAX Low RDS(on) to Minimize Conduction Loss24 V4.8 mW85 A Low Ciss to Minimize Driver Loss Low Gate ChargeN-ChannelDMAXIMUM RATINGS (TJ = 25C Unless otherwise specified

Datasheet: NTD78N03 , NTD80N02 , NTD80N02-001 , NTD80N02-1G , NTD80N02G , NTD80N02T4 , NTD85N02R , NTD85N02R-001 , AO3400 , NTD85N02RT4 , NTD95N02R , NTD95N02R-1G , NTD95N02RT4 , NTDV18N06LT4G , NTDV20N06 , NTDV20N06L , NTDV20P06L .

History: DMN2013UFX | AOTS32334C

Keywords - NTD85N02R-1G MOSFET datasheet

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