NTD85N02R-1G PDF and Equivalents Search

 

NTD85N02R-1G Specs and Replacement

Type Designator: NTD85N02R-1G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 78.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 24 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 85 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 77 nS

Cossⓘ - Output Capacitance: 871 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0052 Ohm

Package: IPAK

NTD85N02R-1G substitution

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NTD85N02R-1G datasheet

 ..1. Size:76K  onsemi
 ntd85n02r-001 ntd85n02r-1g ntd85n02r ntd85n02rt4 ntd85n02r-d.pdf pdf_icon

NTD85N02R-1G

NTD85N02R Power MOSFET 24 Volts, 85 Amps Single N-Channel, DPAK/IPAK http //onsemi.com Features Planar HD3e Process for Fast Switching Performance V(BR)DSS RDS(ON) MAX ID MAX Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses 24 V 5.2 mW @ 10 V 85 A Low Gate Charge to Minimize Switching Losses Pb-Free Packages are Available N-Ch... See More ⇒

 5.1. Size:83K  onsemi
 ntd85n02r.pdf pdf_icon

NTD85N02R-1G

NTD85N02R Power MOSFET 85 Amps, 24 Volts N-Channel DPAK Features http //onsemi.com Pb-Free Packages are Available Planar HD3e Process for Fast Switching Performance VDSS RDS(ON) TYP ID MAX Low RDS(on) to Minimize Conduction Loss 24 V 4.8 mW 85 A Low Ciss to Minimize Driver Loss Low Gate Charge N-Channel D MAXIMUM RATINGS (TJ = 25 C Unless otherwise specified... See More ⇒

Detailed specifications: NTD78N03 , NTD80N02 , NTD80N02-001 , NTD80N02-1G , NTD80N02G , NTD80N02T4 , NTD85N02R , NTD85N02R-001 , IRF9540 , NTD85N02RT4 , NTD95N02R , NTD95N02R-1G , NTD95N02RT4 , NTDV18N06LT4G , NTDV20N06 , NTDV20N06L , NTDV20P06L .

History: FDD1600N10ALZD | NTGS5120P

Keywords - NTD85N02R-1G MOSFET specs

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