NTD85N02R-1G MOSFET Datasheet: N-Ch, 24V, 85A. Full specification with pinout and replacement list

NTD85N02R-1G Specs and Replacement

   Type Designator: NTD85N02R-1G
   Marking Code: 85N02R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 78.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 24 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 85 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   Qg ⓘ - Total Gate Charge: 17.7 nC
   tr ⓘ - Rise Time: 77 nS
   Cossⓘ - Output Capacitance: 871 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0052 Ohm
   Package: IPAK

NTD85N02R-1G substitution

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NTD85N02R-1G datasheet

..1. Size:76K onsemi
ntd85n02r-001 ntd85n02r-1g ntd85n02r ntd85n02rt4 ntd85n02r-d.pdf pdf_icon

NTD85N02R Power MOSFET 24 Volts, 85 Amps Single N-Channel, DPAK/IPAK http //onsemi.com Features Planar HD3e Process for Fast Switching Performance V(BR)DSS RDS(ON) MAX ID MAX Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses 24 V 5.2 mW @ 10 V 85 A Low Gate Charge to Minimize Switching Losses Pb-Free Packages are Available N-Ch... See More ⇒

5.1. Size:83K onsemi
ntd85n02r.pdf pdf_icon

NTD85N02R Power MOSFET 85 Amps, 24 Volts N-Channel DPAK Features http //onsemi.com Pb-Free Packages are Available Planar HD3e Process for Fast Switching Performance VDSS RDS(ON) TYP ID MAX Low RDS(on) to Minimize Conduction Loss 24 V 4.8 mW 85 A Low Ciss to Minimize Driver Loss Low Gate Charge N-Channel D MAXIMUM RATINGS (TJ = 25 C Unless otherwise specified... See More ⇒

Detailed specifications: NTD78N03 , NTD80N02 , NTD80N02-001 , NTD80N02-1G , NTD80N02G , NTD80N02T4 , NTD85N02R , NTD85N02R-001 , IRF9540 , NTD85N02RT4 , NTD95N02R , NTD95N02R-1G , NTD95N02RT4 , NTDV18N06LT4G , NTDV20N06 , NTDV20N06L , NTDV20P06L .