NTD95N02RT4 Specs and Replacement
Type Designator: NTD95N02RT4
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 86 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 24 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 32 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 82 nS
Cossⓘ - Output Capacitance: 1020 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: DPAK
NTD95N02RT4 substitution
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NTD95N02RT4 datasheet
ntd95n02r-1g ntd95n02r ntd95n02rt4 ntd95n02r-d.pdf
NTD95N02R Power MOSFET 95 Amps, 24 Volts N-Channel DPAK Features http //onsemi.com High Power and Current Handling Capability V(BR)DSS RDS(ON) TYP ID MAX* Fast Switching Performance 4.5 mW @ 10 V Low RDS(on) to Minimize Conduction Loss 24 V 95 A 5.9 mW @ 4.5 V Low Gate Charge to Minimize Switching Losses *ID MAX in the product summary table is continuous Pb-Fr... See More ⇒
Detailed specifications: NTD80N02G , NTD80N02T4 , NTD85N02R , NTD85N02R-001 , NTD85N02R-1G , NTD85N02RT4 , NTD95N02R , NTD95N02R-1G , 2N7002 , NTDV18N06LT4G , NTDV20N06 , NTDV20N06L , NTDV20P06L , NTDV3055L104 , NTDV5804N , NTF2955PT1G , NTF2955T1G .
Keywords - NTD95N02RT4 MOSFET specs
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