All MOSFET. NTDV18N06LT4G Datasheet

 

NTDV18N06LT4G Datasheet and Replacement


   Type Designator: NTDV18N06LT4G
   Marking Code: 18N6L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 55 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 18 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 11 nC
   trⓘ - Rise Time: 79 nS
   Cossⓘ - Output Capacitance: 166 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
   Package: DPAK
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NTDV18N06LT4G Datasheet (PDF)

 ..1. Size:156K  onsemi
 ntd18n06lg ntdv18n06lt4g.pdf pdf_icon

NTDV18N06LT4G

NTD18N06L, NTDV18N06LPower MOSFET18 A, 60 V, Logic Level N-Channel DPAKDesigned for low voltage, high speed switching applications inpower supplies, converters and power motor controls and bridgecircuits.http://onsemi.comFeaturesV(BR)DSS RDS(on) TYP ID MAX AEC Q101 Qualified - NTDV18N06L18 A These Devices are Pb-Free and are RoHS Compliant60 V 54 mW@5.0 V(Note 1)

 4.1. Size:86K  onsemi
 ntd18n06l ntdv18n06l.pdf pdf_icon

NTDV18N06LT4G

NTD18N06L, NTDV18N06LPower MOSFET18 A, 60 V, Logic Level N-Channel DPAKDesigned for low voltage, high speed switching applications inpower supplies, converters and power motor controls and bridgecircuits.www.onsemi.comFeaturesV(BR)DSS RDS(on) TYP ID MAX AEC Q101 Qualified - NTDV18N06L18 A These Devices are Pb-Free and are RoHS Compliant60 V 54 mW@5.0 V(Note 1)T

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Keywords - NTDV18N06LT4G MOSFET datasheet

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