NTDV18N06LT4G MOSFET Datasheet: N-Ch, 60V, 18A. Full specification with pinout and replacement list

NTDV18N06LT4G Specs and Replacement

Type Designator: NTDV18N06LT4G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 55 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 79 nS

Cossⓘ - Output Capacitance: 166 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm

Package: DPAK

NTDV18N06LT4G substitution

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NTDV18N06LT4G datasheet

..1. Size:156K onsemi
ntd18n06lg ntdv18n06lt4g.pdf pdf_icon

NTD18N06L, NTDV18N06L Power MOSFET 18 A, 60 V, Logic Level N-Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http //onsemi.com Features V(BR)DSS RDS(on) TYP ID MAX AEC Q101 Qualified - NTDV18N06L 18 A These Devices are Pb-Free and are RoHS Compliant 60 V 54 mW@5.0 V (Note 1)... See More ⇒

4.1. Size:86K onsemi
ntd18n06l ntdv18n06l.pdf pdf_icon

NTD18N06L, NTDV18N06L Power MOSFET 18 A, 60 V, Logic Level N-Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. www.onsemi.com Features V(BR)DSS RDS(on) TYP ID MAX AEC Q101 Qualified - NTDV18N06L 18 A These Devices are Pb-Free and are RoHS Compliant 60 V 54 mW@5.0 V (Note 1) T... See More ⇒

Detailed specifications: NTD80N02T4, NTD85N02R, NTD85N02R-001, NTD85N02R-1G, NTD85N02RT4, NTD95N02R, NTD95N02R-1G, NTD95N02RT4, IRF9540N, NTDV20N06, NTDV20N06L, NTDV20P06L, NTDV3055L104, NTDV5804N, NTF2955PT1G, NTF2955T1G, NTF3055-100T1