FCH067N65S3 Spec and Replacement
Type Designator: FCH067N65S3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 312 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 44 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 52 nS
Cossⓘ - Output Capacitance: 68 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.067 Ohm
Package: TO247
FCH067N65S3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FCH067N65S3 Specs
fch067n65s3.pdf
FCH067N65S3 MOSFET Power, N-Channel, SUPERFET III, Easy Drive 650 V, 44 A, 67 mW Description www.onsemi.com SUPERFET III MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge VDSS RDS(ON) MAX ID MAX balance technology for outstanding low on-resistance and lower gate 650 V 67 mW @ 10 V 44 A charge performance. This advanced... See More ⇒
fch067n65s3.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor FCH067N65S3 FEATURES With TO-247 packaging High speed switching Very high commutation ruggedness Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS PFC stages Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25... See More ⇒
Detailed specifications: 2SK428 , 30N50 , 80N06 , AM30N10 , AOD2144 , BUK437-500B , BUK637-500B , CSD30N30 , 10N65 , FCP067N65S3 , FCP099N65S3 , FCP190N65S3 , FCP290N80 , FCPF125N65S3 , FCPF400N80ZCN , FDD9407 , FMP60N280S2HF .
History: JMSH1516AG
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