IPB156N22NFD Specs and Replacement
Type Designator: IPB156N22NFD
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 220 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 72 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 343 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0156 Ohm
Package: TO263
IPB156N22NFD substitution
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IPB156N22NFD datasheet
ipb156n22nfd.pdf
IPB156N22NFD MOSFET D PAK OptiMOSTMFD Power-Transistor, 220 V Features N-channel, normal level Fast Diode (FD) with reduced Q rr Optimized for hard commutation ruggedness Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Halogen-free according to ... See More ⇒
ipb156n22nfd.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPB156N22NFD FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU... See More ⇒
ipp15n03l ipb15n03l.pdf
IPP15N03L IPB15N03L OptiMOS Buck converter series Product Summary Feature VDS 30 V N-Channel RDS(on) max. SMD version 12.6 m Logic Level ID 42 A Low On-Resistance RDS(on) P- TO263 -3-2 P- TO220 -3-1 Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175 C operating temperature Avalanche rated dv/dt rated Ideal for f... See More ⇒
Detailed specifications: IPA60R280P7, IPA60R600P7, IPA65R1K0CE, IPA65R400CE, IPAN50R500CE, IPAN60R800CE, IPB073N15N5, IPB090N06N3, AON7403, IPB60R280P6, IPD30N03S2L, IPP60R060P7, IPP60R070CFD7, IRF3205STRLPBF, IRF7473TRPBF, IRFI3306G, IRFI4228
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