IPB156N22NFD Datasheet and Replacement
Type Designator: IPB156N22NFD
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 220 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 72 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 343 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0156 Ohm
Package: TO263
IPB156N22NFD substitution
IPB156N22NFD Datasheet (PDF)
ipb156n22nfd.pdf

IPB156N22NFDMOSFETDPAKOptiMOSTMFD Power-Transistor, 220 VFeatures N-channel, normal level Fast Diode (FD) with reduced Qrr Optimized for hard commutation ruggedness Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Halogen-free according to
ipb156n22nfd.pdf

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPB156N22NFDFEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU
ipp15n03l ipb15n03l.pdf

IPP15N03LIPB15N03LOptiMOS Buck converter seriesProduct SummaryFeatureVDS 30 V N-ChannelRDS(on) max. SMD version 12.6 m Logic LevelID 42 A Low On-Resistance RDS(on)P- TO263 -3-2 P- TO220 -3-1 Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175C operating temperature Avalanche rated dv/dt rated Ideal for f
Datasheet: IPA60R280P7 , IPA60R600P7 , IPA65R1K0CE , IPA65R400CE , IPAN50R500CE , IPAN60R800CE , IPB073N15N5 , IPB090N06N3 , EMB04N03H , IPB60R280P6 , IPD30N03S2L , IPP60R060P7 , IPP60R070CFD7 , IRF3205STRLPBF , IRF7473TRPBF , IRFI3306G , IRFI4228 .
History: NDDP010N25AZ
Keywords - IPB156N22NFD MOSFET datasheet
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History: NDDP010N25AZ



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