2N7640-GA Datasheet and Replacement
Type Designator: 2N7640-GA
Type of Transistor: JFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 27 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 16 A
Tjⓘ - Maximum Junction Temperature: 250 °C
trⓘ - Rise Time: 37 nS
Cossⓘ - Output Capacitance: 157 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
Package: TO-276AA
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2N7640-GA Datasheet (PDF)
2n7640-ga.pdf

2N7640-GANormally OFF Silicon Carbide VDS = 650 V Junction Transistor VDS(ON) = 1.7 V ID = 16 A RDS(ON) = 110 m Features Package 250 C maximum operating temperature RoHS Compliant Temperature independent switching performance D Gate oxide free SiC switch S Suitable for connecting an anti-parallel diode Positive temperature coefficient for e
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
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History: 2SK1571 | IRF7473



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