2N7640-GA Datasheet and Replacement
Type Designator: 2N7640-GA
Type of Transistor: JFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 27 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 16 A
Tj ⓘ - Maximum Junction Temperature: 250 °C
tr ⓘ - Rise Time: 37 nS
Cossⓘ - Output Capacitance: 157 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
Package: TO-276AA
2N7640-GA substitution
2N7640-GA Datasheet (PDF)
2n7640-ga.pdf

2N7640-GANormally OFF Silicon Carbide VDS = 650 V Junction Transistor VDS(ON) = 1.7 V ID = 16 A RDS(ON) = 110 m Features Package 250 C maximum operating temperature RoHS Compliant Temperature independent switching performance D Gate oxide free SiC switch S Suitable for connecting an anti-parallel diode Positive temperature coefficient for e
Datasheet: IRFI7440G , IRFI7446G , IRFI7536G , IRFIP054 , 2N7636-GA , 2N7637-GA , 2N7638-GA , 2N7639-GA , IRF540N , IRFZ24NLPBF , 2N7635-GA , IRLB4132 , IRLI3705 , IXFA20N85XHV , IXFA34N65X2 , IXFH20N85X , IXFH30N85X .
Keywords - 2N7640-GA MOSFET datasheet
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History: CS10N80F | CS2N60A4H



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