IXFH20N85X PDF and Equivalents Search

 

IXFH20N85X Specs and Replacement

Type Designator: IXFH20N85X

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 540 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 850 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 28 nS

Cossⓘ - Output Capacitance: 1730 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.33 Ohm

Package: TO247

IXFH20N85X substitution

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IXFH20N85X datasheet

 ..1. Size:226K  ixys
ixfp20n85x ixfh20n85x.pdf pdf_icon

IXFH20N85X

X-Class HiPerFETTM VDSS = 850V IXFP20N85X Power MOSFET ID25 = 20A IXFH20N85X RDS(on) 330m N-Channel Enhancement Mode Avalanche Rated TO-220 (IXFP) G Symbol Test Conditions Maximum Ratings D S VDSS TJ = 25 C to 150 C 850 V D (Tab) VDGR TJ = 25 C to 150 C, RGS = 1M 850 V TO-247 (IXFH) VGSS Continuous 30 V VGSM Transient 4... See More ⇒

 ..2. Size:288K  ixys
ixfa20n85xhv ixfh20n85x ixfa20n85xhv ixfp20n85x ixfh20n85x.pdf pdf_icon

IXFH20N85X

X-Class HiPerFETTM VDSS = 850V IXFA20N85XHV Power MOSFET ID25 = 20A IXFP20N85X RDS(on) 330m IXFH20N85X N-Channel Enhancement Mode TO-263HV Avalanche Rated Fast Intrinsic Diode G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXFP) VDSS TJ = 25 C to 150 C 850 V VDGR TJ = 25 C to 150 C, RGS = 1M 850 V VGSS Continuo... See More ⇒

 ..3. Size:212K  inchange semiconductor
ixfh20n85x.pdf pdf_icon

IXFH20N85X

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IXFH20N85X FEATURES With TO-247 packaging With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source ... See More ⇒

 6.1. Size:149K  ixys
ixfh20n80q ixfk20n80q ixft20n80q.pdf pdf_icon

IXFH20N85X

IXFH20N80Q VDSS = 800 V HiPerFETTM IXFK20N80Q ID25 = 20 A Power MOSFETs IXFT20N80Q RDS(on) = 0.42 Q-Class N-Channel Enhancement Mode trr 250 ns Avalanche Rated, Low Qg, High dv/dt Preliminary Data TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 M 800 ... See More ⇒

Detailed specifications: 2N7639-GA, 2N7640-GA, IRFZ24NLPBF, 2N7635-GA, IRLB4132, IRLI3705, IXFA20N85XHV, IXFA34N65X2, IRFB4110, IXFH30N85X, IXFP12N65X2M, IXFP22N65X2M, IXTP24N65X2M, IXFP34N65X2, MDE1932, MDP10N055, MDP1921

Keywords - IXFH20N85X MOSFET specs

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