All MOSFET. MMF80R450PTH Datasheet

 

MMF80R450PTH MOSFET. Datasheet pdf. Equivalent


   Type Designator: MMF80R450PTH
   Marking Code: 80R450P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 33.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 11 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 37.6 nC
   trⓘ - Rise Time: 44 nS
   Cossⓘ - Output Capacitance: 989 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
   Package: TO220F

 MMF80R450PTH Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MMF80R450PTH Datasheet (PDF)

 ..1. Size:279K  inchange semiconductor
 mmf80r450pth.pdf

MMF80R450PTH MMF80R450PTH

isc N-Channel MOSFET Transistor MMF80R450PTHFEATURESDrain Current : I = 11A@ T =25D CDrain Source Voltage: V = 800V(Min)DSSStatic Drain-Source On-Resistance: R = 0.45(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so

 4.1. Size:1626K  magnachip
 mmf80r450pbth.pdf

MMF80R450PTH MMF80R450PTH

MMF80R450PB Datasheet MMF80R450PB 800V 0.45 N-channel MOSFET Description MMF80R450PB is power MOSFET using Magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well a

 4.2. Size:1404K  magnachip
 mmf80r450p.pdf

MMF80R450PTH MMF80R450PTH

MMF80R450P Datasheet MMF80R450P 800V 0.45 N-channel MOSFET Description MMF80R450P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l

 4.3. Size:279K  inchange semiconductor
 mmf80r450pbth.pdf

MMF80R450PTH MMF80R450PTH

isc N-Channel MOSFET Transistor MMF80R450PBTHFEATURESDrain Current : I = 11A@ T =25D CDrain Source Voltage: V = 800V(Min)DSSStatic Drain-Source On-Resistance: R = 0.45(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand s

 4.4. Size:200K  inchange semiconductor
 mmf80r450p.pdf

MMF80R450PTH MMF80R450PTH

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor MMF80R450PFEATURESLow power lossHigh speed switchingLow on-resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsMotor controlDC DC convertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER V

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