isc N-Channel MOSFET Transistor MMF80R450PTHFEATURESDrain Current : I = 11A@ T =25D CDrain Source Voltage: V = 800V(Min)DSSStatic Drain-Source On-Resistance: R = 0.45(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so

MMF80R450PB Datasheet MMF80R450PB 800V 0.45 N-channel MOSFET Description MMF80R450PB is power MOSFET using Magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well a

MMF80R450P Datasheet MMF80R450P 800V 0.45 N-channel MOSFET Description MMF80R450P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l

isc N-Channel MOSFET Transistor MMF80R450PBTHFEATURESDrain Current : I = 11A@ T =25D CDrain Source Voltage: V = 800V(Min)DSSStatic Drain-Source On-Resistance: R = 0.45(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand s

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor MMF80R450PFEATURESLow power lossHigh speed switchingLow on-resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsMotor controlDC DC convertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER V