MMF80R450PTH - описание и поиск аналогов

 

MMF80R450PTH. Аналоги и основные параметры

Наименование производителя: MMF80R450PTH

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 33.6 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 800 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 11 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 44 ns

Cossⓘ - Выходная емкость: 989 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.45 Ohm

Тип корпуса: TO220F

Аналог (замена) для MMF80R450PTH

- подборⓘ MOSFET транзистора по параметрам

 

MMF80R450PTH даташит

 ..1. Size:279K  inchange semiconductor
mmf80r450pth.pdfpdf_icon

MMF80R450PTH

isc N-Channel MOSFET Transistor MMF80R450PTH FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage V = 800V(Min) DSS Static Drain-Source On-Resistance R = 0.45 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so

 4.1. Size:1626K  magnachip
mmf80r450pbth.pdfpdf_icon

MMF80R450PTH

MMF80R450PB Datasheet MMF80R450PB 800V 0.45 N-channel MOSFET Description MMF80R450PB is power MOSFET using Magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well a

 4.2. Size:1404K  magnachip
mmf80r450p.pdfpdf_icon

MMF80R450PTH

MMF80R450P Datasheet MMF80R450P 800V 0.45 N-channel MOSFET Description MMF80R450P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l

 4.3. Size:279K  inchange semiconductor
mmf80r450pbth.pdfpdf_icon

MMF80R450PTH

isc N-Channel MOSFET Transistor MMF80R450PBTH FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage V = 800V(Min) DSS Static Drain-Source On-Resistance R = 0.45 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and s

Другие MOSFET... IXFP22N65X2M , IXTP24N65X2M , IXFP34N65X2 , MDE1932 , MDP10N055 , MDP1921 , MMD80R900P , MMF60R360QTH , 8205A , MMF80R650PTH , MTP2N50 , NTB082N65S3F , NTE2393 , NTP082N65S3F , NTPF082N65S3F , SIHA11N80E , SKS10N20 .

History: AP99T03GS | MTP2N50 | AP2604GY | AP3P090N | 2SK2371

 

 

 

 

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