All MOSFET. MMF80R650PTH Datasheet

 

MMF80R650PTH Datasheet and Replacement


   Type Designator: MMF80R650PTH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 32 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 29.6 nS
   Cossⓘ - Output Capacitance: 689 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
   Package: TO220F
 

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MMF80R650PTH Datasheet (PDF)

 ..1. Size:200K  inchange semiconductor
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MMF80R650PTH

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor MMF80R650PTHFEATURESLow power lossHigh speed switchingLow on-resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsMotor controlDC DC convertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

 4.1. Size:1053K  magnachip
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MMF80R650PTH

MMF80R650P Datasheet MMF80R650P 800V 0.65 N-channel MOSFET Description MMF80R650P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l

 8.1. Size:1446K  magnachip
mmf80r900pcth.pdf pdf_icon

MMF80R650PTH

MMF80R900PC Datasheet MMF80R900PC 800V 0.9 N-channel MOSFET Description MMF80R900PC is power MOSFET using Magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as

 8.2. Size:1626K  magnachip
mmf80r450pbth.pdf pdf_icon

MMF80R650PTH

MMF80R450PB Datasheet MMF80R450PB 800V 0.45 N-channel MOSFET Description MMF80R450PB is power MOSFET using Magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well a

Datasheet: IXTP24N65X2M , IXFP34N65X2 , MDE1932 , MDP10N055 , MDP1921 , MMD80R900P , MMF60R360QTH , MMF80R450PTH , STP75NF75 , MTP2N50 , NTB082N65S3F , NTE2393 , NTP082N65S3F , NTPF082N65S3F , SIHA11N80E , SKS10N20 , STP30NF10FP .

History: ISCNH373F | CS2N65A4 | HRLO250N10K | SUD25N15-52-E3 | STP2N80K5 | HYG800P10LR1D | SIR878DP

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