Справочник MOSFET. MMF80R650PTH

 

MMF80R650PTH MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: MMF80R650PTH
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 32 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 800 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 8 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 29.6 ns
   Cossⓘ - Выходная емкость: 689 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.65 Ohm
   Тип корпуса: TO220F

 Аналог (замена) для MMF80R650PTH

 

 

MMF80R650PTH Datasheet (PDF)

 ..1. Size:200K  inchange semiconductor
mmf80r650pth.pdf

MMF80R650PTH
MMF80R650PTH

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor MMF80R650PTHFEATURESLow power lossHigh speed switchingLow on-resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsMotor controlDC DC convertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

 4.1. Size:1053K  magnachip
mmf80r650p.pdf

MMF80R650PTH
MMF80R650PTH

MMF80R650P Datasheet MMF80R650P 800V 0.65 N-channel MOSFET Description MMF80R650P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l

 8.1. Size:1446K  magnachip
mmf80r900pcth.pdf

MMF80R650PTH
MMF80R650PTH

MMF80R900PC Datasheet MMF80R900PC 800V 0.9 N-channel MOSFET Description MMF80R900PC is power MOSFET using Magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as

 8.2. Size:1626K  magnachip
mmf80r450pbth.pdf

MMF80R650PTH
MMF80R650PTH

MMF80R450PB Datasheet MMF80R450PB 800V 0.45 N-channel MOSFET Description MMF80R450PB is power MOSFET using Magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well a

 8.3. Size:1063K  magnachip
mmf80r1k2pth.pdf

MMF80R650PTH
MMF80R650PTH

MMF80R1K2P Datasheet MMF80R1K2P 800V 1.2 N-channel MOSFET Description MMF80R1K2P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as lo

 8.4. Size:1404K  magnachip
mmf80r450p.pdf

MMF80R650PTH
MMF80R650PTH

MMF80R450P Datasheet MMF80R450P 800V 0.45 N-channel MOSFET Description MMF80R450P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l

 8.5. Size:1348K  magnachip
mmf80r900qzth.pdf

MMF80R650PTH
MMF80R650PTH

MMF80R900QZ Datasheet MMF80R900QZ 800V 0.90 N-channel MOSFET Description MMF80R900QZ is power MOSFET using Magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well

 8.6. Size:1136K  magnachip
mmf80r900pth.pdf

MMF80R650PTH
MMF80R650PTH

MMF80R900P Datasheet MMF80R900P 800V 0.9 N-channel MOSFET Description MMF80R900P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as lo

 8.7. Size:1200K  magnachip
mmf80r450qzth.pdf

MMF80R650PTH
MMF80R650PTH

MMF80R450QZ Datasheet MMF80R450QZ 800V 0.45 N-channel MOSFET Description MMF80R450QZ is power MOSFET using Magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well

 8.8. Size:1619K  magnachip
mmf80r900pbth.pdf

MMF80R650PTH
MMF80R650PTH

MMF80R900PB Datasheet MMF80R900PB 800V 0.9 N-channel MOSFET Description MMF80R900PB is power MOSFET using Magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as

 8.9. Size:279K  inchange semiconductor
mmf80r900pcth.pdf

MMF80R650PTH
MMF80R650PTH

isc N-Channel MOSFET Transistor MMF80R900PCTHFEATURESDrain Current : I = 6A@ T =25D CDrain Source Voltage: V = 800V(Min)DSSStatic Drain-Source On-Resistance: R = 0.9(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol

 8.10. Size:279K  inchange semiconductor
mmf80r450pth.pdf

MMF80R650PTH
MMF80R650PTH

isc N-Channel MOSFET Transistor MMF80R450PTHFEATURESDrain Current : I = 11A@ T =25D CDrain Source Voltage: V = 800V(Min)DSSStatic Drain-Source On-Resistance: R = 0.45(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so

 8.11. Size:275K  inchange semiconductor
mmf80r1k2p.pdf

MMF80R650PTH
MMF80R650PTH

isc N-Channel MOSFET Transistor MMF80R1K2PFEATURES Drain-source on-resistance:RDS(on) 1.2@10VFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh fast switching Power SupplyABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 800

 8.12. Size:279K  inchange semiconductor
mmf80r450pbth.pdf

MMF80R650PTH
MMF80R650PTH

isc N-Channel MOSFET Transistor MMF80R450PBTHFEATURESDrain Current : I = 11A@ T =25D CDrain Source Voltage: V = 800V(Min)DSSStatic Drain-Source On-Resistance: R = 0.45(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand s

 8.13. Size:279K  inchange semiconductor
mmf80r1k2pth.pdf

MMF80R650PTH
MMF80R650PTH

isc N-Channel MOSFET Transistor MMF80R1K2PTHFEATURESDrain Current : I = 4.5A@ T =25D CDrain Source Voltage: V = 800V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so

 8.14. Size:200K  inchange semiconductor
mmf80r450p.pdf

MMF80R650PTH
MMF80R650PTH

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor MMF80R450PFEATURESLow power lossHigh speed switchingLow on-resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsMotor controlDC DC convertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER V

 8.15. Size:279K  inchange semiconductor
mmf80r900pth.pdf

MMF80R650PTH
MMF80R650PTH

isc N-Channel MOSFET Transistor MMF80R900PTHFEATURESDrain Current : I = 6A@ T =25D CDrain Source Voltage: V = 800V(Min)DSSStatic Drain-Source On-Resistance: R = 0.9(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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