All MOSFET. TK290P60Y Datasheet


TK290P60Y MOSFET. Datasheet pdf. Equivalent

Type Designator: TK290P60Y

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 100 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 11.5 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.29 Ohm

Package: TO252

TK290P60Y Transistor Equivalent Substitute - MOSFET Cross-Reference Search


TK290P60Y Datasheet (PDF)

1.1. tk290p60y.pdf Size:208K _inchange_semiconductor


INCHANGE Semiconductor Isc N-Channel MOSFET Transistor TK290P60Y ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE U

5.1. tk2907attd03.pdf Size:97K _update


 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03A Plastic-Encapsulate Transistors C TK2907ATTD03 TRANSISTOR WBFBP-03A (1.6×1.6×0.5) TOP unit: mm DESCRIPTION PNP Epitaxial planar type Silicon Transistor B E FEATURES 1. BASE C Complementary NPN Type available (TK2222ATTD03) 2. EMITTER 3. COLLECTOR BACK PPLICATION general purpose amplifier, swit

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