All MOSFET. TK290P60Y Datasheet

 

TK290P60Y MOSFET. Datasheet pdf. Equivalent

Type Designator: TK290P60Y

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 100 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 11.5 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 25 nC

Rise Time (tr): 25 nS

Drain-Source Capacitance (Cd): 26 pF

Maximum Drain-Source On-State Resistance (Rds): 0.29 Ohm

Package: TO252

TK290P60Y Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TK290P60Y Datasheet (PDF)

1.1. tk290p60y.pdf Size:451K _update-mosfet

TK290P60Y
TK290P60Y

TK290P60Y MOSFETs Silicon N-Channel MOS (DTMOS) TK290P60Y TK290P60Y TK290P60Y TK290P60Y 1. Applications 1. Applications 1. Applications 1. Applications • Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.23 Ω (typ.) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) E

1.2. tk290p60y.pdf Size:208K _inchange_semiconductor

TK290P60Y
TK290P60Y

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor TK290P60Y ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE U

 5.1. tk2907attd03.pdf Size:97K _update

TK290P60Y
TK290P60Y

 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03A Plastic-Encapsulate Transistors C TK2907ATTD03 TRANSISTOR WBFBP-03A (1.6×1.6×0.5) TOP unit: mm DESCRIPTION PNP Epitaxial planar type Silicon Transistor B E FEATURES 1. BASE C Complementary NPN Type available (TK2222ATTD03) 2. EMITTER 3. COLLECTOR BACK PPLICATION general purpose amplifier, swit

5.2. tk2907attd03.pdf Size:97K _jiangsu

TK290P60Y
TK290P60Y

 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03A Plastic-Encapsulate Transistors C TK2907ATTD03 TRANSISTOR WBFBP-03A (1.6×1.6×0.5) TOP unit: mm DESCRIPTION PNP Epitaxial planar type Silicon Transistor B E FEATURES 1. BASE C Complementary NPN Type available (TK2222ATTD03) 2. EMITTER 3. COLLECTOR BACK PPLICATION general purpose amplifier, swit

 5.3. tk290a60y.pdf Size:253K _inchange_semiconductor

TK290P60Y
TK290P60Y

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor TK290A60Y,ITK290A60Y ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.29Ω (typ.) ·Easy to control Gate switching ·Enhancement mode: Vth = 3 to 4V (VDS = 10 V, ID=0.45mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulato

5.4. tk290a65y.pdf Size:252K _inchange_semiconductor

TK290P60Y
TK290P60Y

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK290A65Y, ITK290A65Y ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.29Ω ·Enhancement mode: Vth = 3 to 4V (VDS = 10 V, ID=0.45mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(T =25

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