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TK290P60Y PDF Specs and Replacement


   Type Designator: TK290P60Y
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 11.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 26 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm
   Package: TO252
 

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TK290P60Y PDF Specs

 ..1. Size:451K  toshiba
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TK290P60Y

TK290P60Y MOSFETs Silicon N-Channel MOS (DTMOS ) TK290P60Y TK290P60Y TK290P60Y TK290P60Y 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.23 (typ.) by using Super Junction Structure DTMOS (2) Easy to control Gate switching (3) E... See More ⇒

 ..2. Size:208K  inchange semiconductor
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TK290P60Y

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor TK290P60Y FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U... See More ⇒

 7.1. Size:451K  toshiba
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TK290P60Y

TK290P65Y MOSFETs Silicon N-Channel MOS (DTMOS ) TK290P65Y TK290P65Y TK290P65Y TK290P65Y 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.23 (typ.) by using Super Junction Structure DTMOS (2) Easy to control Gate switching (3) E... See More ⇒

 9.1. Size:448K  toshiba
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TK290P60Y

TK290A65Y MOSFETs Silicon N-Channel MOS (DTMOS ) TK290A65Y TK290A65Y TK290A65Y TK290A65Y 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.23 (typ.) by using Super Junction Structure DTMOS (2) Easy to control Gate switching (3) E... See More ⇒

Detailed specifications: NTP082N65S3F , NTPF082N65S3F , SIHA11N80E , SKS10N20 , STP30NF10FP , SUD25N15-52-E3 , SUP70040E , SWHA069R10VS , K3569 , VN88AFD , 2SK3262-01MR , MTY30N50E , CMP80N06 , CMB80N06 , CMI80N06 , BUK437-500A , BUK637-400B .

History: NTGS3441T1

Keywords - TK290P60Y MOSFET specs

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