CMP80N06 PDF and Equivalents Search

 

CMP80N06 Specs and Replacement

Type Designator: CMP80N06

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 260 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 160 nS

Cossⓘ - Output Capacitance: 815 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0078 Ohm

Package: TO220

CMP80N06 substitution

- MOSFET ⓘ Cross-Reference Search

 

CMP80N06 datasheet

 ..1. Size:1054K  cmos
 cmp80n06 cmb80n06 cmi80n06.pdf pdf_icon

CMP80N06

CMP80N06/CMB80N06/CMI80N06 N-Channel Enhancement Mode Field Effect Transistor General Description Product Summery The 80N06 is N-ch MOSFET BVDSS RDSON ID with extreme high cell density , 60V 7.8m 80A which provide excellent RDSON and gate charge for most of the Applications synchronous buck converter Motor Control applications. DC-DC converters General Purpose Power Amplif... See More ⇒

Detailed specifications: STP30NF10FP , SUD25N15-52-E3 , SUP70040E , SWHA069R10VS , TK290P60Y , VN88AFD , 2SK3262-01MR , MTY30N50E , SKD502T , CMB80N06 , CMI80N06 , BUK437-500A , BUK637-400B , NTGD4161PT1G , NTGD4169FT1G , NTGS1135PT1G , NTGS3130NT1G .

Keywords - CMP80N06 MOSFET specs

 CMP80N06 cross reference
 CMP80N06 equivalent finder
 CMP80N06 pdf lookup
 CMP80N06 substitution
 CMP80N06 replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 


 
↑ Back to Top
.