All MOSFET. CMP80N06 Datasheet

 

CMP80N06 MOSFET. Datasheet pdf. Equivalent

Type Designator: CMP80N06

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 260 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 80 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 76 nC

Rise Time (tr): 160 nS

Drain-Source Capacitance (Cd): 815 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0078 Ohm

Package: TO220

CMP80N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CMP80N06 Datasheet (PDF)

1.1. cmp80n06 cmb80n06 cmi80n06.pdf Size:1054K _update-mosfet

CMP80N06
CMP80N06

CMP80N06/CMB80N06/CMI80N06 N-Channel Enhancement Mode Field Effect Transistor General Description Product Summery The 80N06 is N-ch MOSFET BVDSS RDSON ID with extreme high cell density , 60V 7.8m 80A which provide excellent RDSON and gate charge for most of the Applications synchronous buck converter Motor Control applications. DC-DC converters General Purpose Power Amplif

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top

 


CMP80N06
  CMP80N06
  CMP80N06
 

social 

LIST

Last Update

MOSFET: WMH07N65C2 | WMG07N65C2 | WMP07N65C2 | WMO07N65C2 | WMM07N65C2 | WML07N65C2 | TP0610T | ME7170-G | LTP70N06 | HY1707PM | HY1707PS | HY1707MF | HY1707I | HY1707B | HY1707M |

 

 

 
Back to Top