All MOSFET. CMI80N06 Datasheet

 

CMI80N06 Datasheet and Replacement


   Type Designator: CMI80N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 260 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 76 nC
   tr ⓘ - Rise Time: 160 nS
   Cossⓘ - Output Capacitance: 815 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0078 Ohm
   Package: TO262
 

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CMI80N06 Datasheet (PDF)

 ..1. Size:1054K  cmos
 cmp80n06 cmb80n06 cmi80n06.pdf pdf_icon

CMI80N06

CMP80N06/CMB80N06/CMI80N06N-Channel Enhancement Mode Field Effect TransistorGeneral Description Product SummeryThe 80N06 is N-ch MOSFETBVDSS RDSON ID with extreme high cell density ,60V 7.8m 80Awhich provide excellent RDSON and gate charge for most of the Applications synchronous buck converter Motor Controlapplications. DC-DC converters General Purpose Power Amplif

Datasheet: SUP70040E , SWHA069R10VS , TK290P60Y , VN88AFD , 2SK3262-01MR , MTY30N50E , CMP80N06 , CMB80N06 , TK10A60D , BUK437-500A , BUK637-400B , NTGD4161PT1G , NTGD4169FT1G , NTGS1135PT1G , NTGS3130NT1G , NTGS3136PT1G , NTGS3433T1G .

History: FCPF850N80Z

Keywords - CMI80N06 MOSFET datasheet

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