CMI80N06 Spec and Replacement
Type Designator: CMI80N06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 260 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 160 nS
Cossⓘ - Output Capacitance: 815 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0078 Ohm
Package: TO262
CMI80N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CMI80N06 Specs
cmp80n06 cmb80n06 cmi80n06.pdf
CMP80N06/CMB80N06/CMI80N06 N-Channel Enhancement Mode Field Effect Transistor General Description Product Summery The 80N06 is N-ch MOSFET BVDSS RDSON ID with extreme high cell density , 60V 7.8m 80A which provide excellent RDSON and gate charge for most of the Applications synchronous buck converter Motor Control applications. DC-DC converters General Purpose Power Amplif... See More ⇒
Detailed specifications: SUP70040E , SWHA069R10VS , TK290P60Y , VN88AFD , 2SK3262-01MR , MTY30N50E , CMP80N06 , CMB80N06 , 13N50 , BUK437-500A , BUK637-400B , NTGD4161PT1G , NTGD4169FT1G , NTGS1135PT1G , NTGS3130NT1G , NTGS3136PT1G , NTGS3433T1G .
History: TIS75
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
