All MOSFET. CMI80N06 Datasheet

 

CMI80N06 MOSFET. Datasheet pdf. Equivalent


   Type Designator: CMI80N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 260 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 76 nC
   trⓘ - Rise Time: 160 nS
   Cossⓘ - Output Capacitance: 815 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0078 Ohm
   Package: TO262

 CMI80N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CMI80N06 Datasheet (PDF)

 ..1. Size:1054K  cmos
 cmp80n06 cmb80n06 cmi80n06.pdf

CMI80N06 CMI80N06

CMP80N06/CMB80N06/CMI80N06N-Channel Enhancement Mode Field Effect TransistorGeneral Description Product SummeryThe 80N06 is N-ch MOSFETBVDSS RDSON ID with extreme high cell density ,60V 7.8m 80Awhich provide excellent RDSON and gate charge for most of the Applications synchronous buck converter Motor Controlapplications. DC-DC converters General Purpose Power Amplif

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: P0770JF

 

 
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