NTHD2110TT1G Datasheet. Specs and Replacement

Type Designator: NTHD2110TT1G  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8.6 nS

Cossⓘ - Output Capacitance: 260 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm

Package: CHIPFET

NTHD2110TT1G substitution

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NTHD2110TT1G datasheet

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NTHD2110TT1G

AND PIN A NTHD2110T Power MOSFET -12 V, -6.4 A, Single P-Channel +TVS, ChipFETt Package Features Low RDS(on) MOSFET and TVS Diode ChipFET Package Integrated Drain Side TVS for 15 kV Contact Discharge ESD http //onsemi.com Protection V(BR)DSS RDS(on) MAX ID MAX 1.8 V Gate Rating This is a Pb-Free Device 40 mW @ -4.5 V Applications 53 mW @ -2.5 V -6.4 A -12 V B... See More ⇒

 8.1. Size:63K  onsemi
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NTHD2110TT1G

NTHD2102P Power MOSFET -8.0 V, -4.6 A Dual P-Channel ChipFETt Features Offers an Ultra Low RDS(on) Solution in the ChipFET Package Miniature ChipFET Package 40% Smaller Footprint than TSOP-6 http //onsemi.com making it an Ideal Device for Applications where Board Space is at a Premium V(BR)DSS RDS(on) TYP ID MAX Low Profile (... See More ⇒

Detailed specifications: NTGS3443BT1G, NTGS3443T1, NTGS3446T1, NTGS3447PT1G, NTGS3455T1, NTGS4111PT1, NTGS4141NT1G, NTGS5120PT1G, 10N65, NTHD3101FT1G, NTHD3101FT3, NTHD3133PFT1G, NTHD4N02FT1, NTHD4P02FT1G, NTHD5904NT1, NTHD5904NT3, NTHS2101PT1

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.