All MOSFET. NTHD2110TT1G Datasheet

 

NTHD2110TT1G Datasheet and Replacement


   Type Designator: NTHD2110TT1G
   Marking Code: FTZ
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.85 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 10.5 nC
   tr ⓘ - Rise Time: 8.6 nS
   Cossⓘ - Output Capacitance: 260 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: CHIPFET
 
   - MOSFET ⓘ Cross-Reference Search

 

NTHD2110TT1G Datasheet (PDF)

 ..1. Size:89K  onsemi
 nthd2110tt1g.pdf pdf_icon

NTHD2110TT1G

AND PIN ANTHD2110TPower MOSFET-12 V, -6.4 A, Single P-Channel +TVS,ChipFETt PackageFeatures Low RDS(on) MOSFET and TVS Diode ChipFET Package Integrated Drain Side TVS for 15 kV Contact Discharge ESDhttp://onsemi.comProtectionV(BR)DSS RDS(on) MAX ID MAX 1.8 V Gate Rating This is a Pb-Free Device 40 mW @ -4.5 VApplications53 mW @ -2.5 V -6.4 A-12 V B

 8.1. Size:63K  onsemi
 nthd2102p-d.pdf pdf_icon

NTHD2110TT1G

NTHD2102PPower MOSFET-8.0 V, -4.6 A Dual P-Channel ChipFETtFeatures Offers an Ultra Low RDS(on) Solution in the ChipFET Package Miniature ChipFET Package 40% Smaller Footprint than TSOP-6http://onsemi.commaking it an Ideal Device for Applications where Board Space is at aPremium V(BR)DSS RDS(on) TYP ID MAX Low Profile (

Datasheet: NTGS3443BT1G , NTGS3443T1 , NTGS3446T1 , NTGS3447PT1G , NTGS3455T1 , NTGS4111PT1 , NTGS4141NT1G , NTGS5120PT1G , STP80NF70 , NTHD3101FT1G , NTHD3101FT3 , NTHD3133PFT1G , NTHD4N02FT1 , NTHD4P02FT1G , NTHD5904NT1 , NTHD5904NT3 , NTHS2101PT1 .

History: SI4416DY | SPI80N06S2-08

Keywords - NTHD2110TT1G MOSFET datasheet

 NTHD2110TT1G cross reference
 NTHD2110TT1G equivalent finder
 NTHD2110TT1G lookup
 NTHD2110TT1G substitution
 NTHD2110TT1G replacement

 

 
Back to Top

 


 
.