NTHD2110TT1G Datasheet and Replacement
Type Designator: NTHD2110TT1G
Marking Code: FTZ
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.85 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 10.5 nC
tr ⓘ - Rise Time: 8.6 nS
Cossⓘ - Output Capacitance: 260 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
Package: CHIPFET
NTHD2110TT1G Datasheet (PDF)
nthd2110tt1g.pdf

AND PIN ANTHD2110TPower MOSFET-12 V, -6.4 A, Single P-Channel +TVS,ChipFETt PackageFeatures Low RDS(on) MOSFET and TVS Diode ChipFET Package Integrated Drain Side TVS for 15 kV Contact Discharge ESDhttp://onsemi.comProtectionV(BR)DSS RDS(on) MAX ID MAX 1.8 V Gate Rating This is a Pb-Free Device 40 mW @ -4.5 VApplications53 mW @ -2.5 V -6.4 A-12 V B
nthd2102p-d.pdf

NTHD2102PPower MOSFET-8.0 V, -4.6 A Dual P-Channel ChipFETtFeatures Offers an Ultra Low RDS(on) Solution in the ChipFET Package Miniature ChipFET Package 40% Smaller Footprint than TSOP-6http://onsemi.commaking it an Ideal Device for Applications where Board Space is at aPremium V(BR)DSS RDS(on) TYP ID MAX Low Profile (
Datasheet: NTGS3443BT1G , NTGS3443T1 , NTGS3446T1 , NTGS3447PT1G , NTGS3455T1 , NTGS4111PT1 , NTGS4141NT1G , NTGS5120PT1G , STP80NF70 , NTHD3101FT1G , NTHD3101FT3 , NTHD3133PFT1G , NTHD4N02FT1 , NTHD4P02FT1G , NTHD5904NT1 , NTHD5904NT3 , NTHS2101PT1 .
History: SI4416DY | SPI80N06S2-08
Keywords - NTHD2110TT1G MOSFET datasheet
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History: SI4416DY | SPI80N06S2-08



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