NTHS4111PT1G Datasheet. Specs and Replacement
Type Designator: NTHS4111PT1G 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 143 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
Package: CHIPFET
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NTHS4111PT1G substitution
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NTHS4111PT1G datasheet
nths4111pt1g.pdf
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nths4101p-d.pdf
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nths4101p.pdf
NTHS4101P MOSFET Power, P-Channel, ChipFET -20 V, 6.7 A Features Offers an Ultra Low RDS(on) Solution in the ChipFET Package http //onsemi.com Miniature ChipFET Package 40% Smaller Footprint than TSOP-6 making it an Ideal Device for Applications where Board Space is at a V(BR)DSS RDS(on) TYP ID MAX Premium 21 mW @ -4.5 V Low Profile (... See More ⇒
Detailed specifications: NTHD3133PFT1G, NTHD4N02FT1, NTHD4P02FT1G, NTHD5904NT1, NTHD5904NT3, NTHS2101PT1, NTHS2101PT1G, NTHS4101PT1G, 2N60, NTHS4166NT1G, NTHS4501NT1, NTHS4501NT1G, NTHS5402T1, NTHS5404T1G, NTHS5441PT1G, NTHS5441T1G, NTHS5443T1
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