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NTHS4111PT1G MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NTHS4111PT1G
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 0.7 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 3.3 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 8 ns
   Cossⓘ - Выходная емкость: 143 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.045 Ohm
   Тип корпуса: CHIPFET

 Аналог (замена) для NTHS4111PT1G

 

 

NTHS4111PT1G Datasheet (PDF)

 ..1. Size:193K  onsemi
 nths4111pt1g.pdf

NTHS4111PT1G NTHS4111PT1G

NTHS4111PPower MOSFET-30 V, -6.1 A, Single P-Channel, ChipFETtFeatures Offers an Ultra Low RDS(on) Solution in the ChipFET Packagehttp://onsemi.com ChipFET Package 40% Smaller Footprint than TSOP-6 Low Profile (

 8.1. Size:84K  onsemi
 nths4166n nths4166nt1g.pdf

NTHS4111PT1G NTHS4111PT1G

NTHS4166NPower MOSFET30 V, 8.2 A, Single N-Channel, ChipFETt PackageFeatureshttp://onsemi.com Trench Technology Low RDS(on) to Minimize Conduction Losses Leadless ChipFET Package has 40% Smaller Footprint than TSOP-6V(BR)DSS RDS(on) Max ID Max Excellent Thermal Capabilities22 mW @ 10 V This is a Pb-Free Device30 V 8.2 A27 mW @ 4.5 VApplications

 8.2. Size:59K  onsemi
 nths4101p-d.pdf

NTHS4111PT1G NTHS4111PT1G

NTHS4101PPower MOSFET-20 V, 6.7 A, P-Channel ChipFETtFeatures Offers an Ultra Low RDS(on) Solution in the ChipFET Package Miniature ChipFET Package 40% Smaller Footprint than TSOP-6http://onsemi.commaking it an Ideal Device for Applications where Board Space is at aPremiumV(BR)DSS RDS(on) TYP ID MAX Low Profile (

 8.3. Size:118K  onsemi
 nths4101p.pdf

NTHS4111PT1G NTHS4111PT1G

NTHS4101PMOSFET Power,P-Channel, ChipFET-20 V, 6.7 AFeatures Offers an Ultra Low RDS(on) Solution in the ChipFET Packagehttp://onsemi.com Miniature ChipFET Package 40% Smaller Footprint than TSOP-6making it an Ideal Device for Applications where Board Space is at a V(BR)DSS RDS(on) TYP ID MAXPremium21 mW @ -4.5 V Low Profile (

 8.4. Size:122K  onsemi
 nths4101pt1g.pdf

NTHS4111PT1G NTHS4111PT1G

NTHS4101PPower MOSFET-20 V, 6.7 A, P-Channel ChipFETtFeatures Offers an Ultra Low RDS(on) Solution in the ChipFET Package Miniature ChipFET Package 40% Smaller Footprint than TSOP-6http://onsemi.commaking it an Ideal Device for Applications where Board Space is at aPremiumV(BR)DSS RDS(on) TYP ID MAX Low Profile (

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