NTJS3157NT4 Datasheet. Specs and Replacement
Type Designator: NTJS3157NT4 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 3.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 75 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package: SOT-363
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NTJS3157NT4 substitution
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NTJS3157NT4 datasheet
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NTJS3157N Trench Power MOSFET 20 V, 4.0 A, Single N-Channel, SC-88 Features Leading Trench Technology for Low RDS(ON) Extending Battery Life http //onsemi.com Fast Switching for Increased Circuit Efficiency SC-88 Small Outline (2 x 2 mm) for Maximum Circuit Board V(BR)DSS RDS(on) Typ ID Max Utilization, Same as SC-70-6 45 mW @ 4.5 V Pb-Free Packages are Available 4.0... See More ⇒
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NTJS3151P Trench Power MOSFET 12 V, 3.3 A, Single P-Channel, ESD Protected SC-88 Features http //onsemi.com Leading Trench Technology for Low RDS(ON) Extending Battery Life SC-88 Small Outline (2x2 mm, SC70-6 Equivalent) V(BR)DSS RDS(on) Typ ID Max Gate Diodes for ESD Protection 45 mW @ -4.5 V Pb-Free Packages are Available -12 V 67 mW @ -2.5 V -3.3 A Applications... See More ⇒
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NTJS3151P, NVJS3151P Trench Power MOSFET 12 V, 3.3 A, Single P-Channel, ESD Protected SC-88 Features www.onsemi.com Leading Trench Technology for Low RDS(ON) Extending Battery Life SC-88 Small Outline (2x2 mm, SC70-6 Equivalent) V(BR)DSS RDS(on) Typ ID Max Gate Diodes for ESD Protection 45 mW @ -4.5 V NV Prefix for Automotive and Other Applications Requiring Unique ... See More ⇒
Detailed specifications: NTHS5445T1, NTJD4105CT1G, NTJD4152PT1G, NTJD4158CT1G, NTJS3151PT1G, NTJS3151PT2, NTJS3157NT1G, NTJS3157NT2, EMB04N03H, NTJS4151PT1, NTJS4151PT1G, NTJS4160NT1G, NTJS4405NT1, NTJS4405NT4, NTK3043NAT5G, NTK3043NT1G, NTK3134NT1G
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