NTJS4160NT1G MOSFET. Datasheet pdf. Equivalent
Type Designator: NTJS4160NT1G
Marking Code: T7
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
|Id|ⓘ - Maximum Drain Current: 1.8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 2.75 nC
trⓘ - Rise Time: 7.2 nS
Cossⓘ - Output Capacitance: 62 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package: SOT-363
NTJS4160NT1G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTJS4160NT1G Datasheet (PDF)
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