NTJS4160NT1G Datasheet. Specs and Replacement
Type Designator: NTJS4160NT1G 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7.2 nS
Cossⓘ - Output Capacitance: 62 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package: SOT-363
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NTJS4160NT1G substitution
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NTJS4160NT1G datasheet
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NTJS4151P Trench Power MOSFET -20 V, -4.2 A, Single P-Channel, SC-88 Features Leading Trench Technology for Low RDS(ON) Extending Battery Life http //onsemi.com SC-88 Small Outline (2x2 mm) for Maximum Circuit Board V(BR)DSS RDS(on) Typ ID Max Utilization, Same as SC-70-6 47 mW @ -4.5 V Gate Diodes for ESD Protection -20 V 70 mW @ -2.5 V -4.2 A Pb-Free Package is Avai... See More ⇒
ntjs4405n.pdf
NTJS4405N Small Signal MOSFET 25 V, 1.2 A, Single, N-Channel, SC-88 Features Advance Planar Technology for Fast Switching, Low RDS(on) http //onsemi.com Higher Efficiency Extending Battery Life V(BR)DSS RDS(on) Typ ID Max Pb-Free Packages are Available 249 mW @ 4.5 V 25 V 1.2 A Applications 299 mW @ 2.7 V Boost and Buck Converter Load Switch N-Channel Batt... See More ⇒
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NTJS4405N, NVJS4405N MOSFET Single, N-Channel, Small Signal, SC-88 25 V, 1.2 A http //onsemi.com Features V(BR)DSS RDS(on) Typ ID Max Advance Planar Technology for Fast Switching, Low RDS(on) 249 mW @ 4.5 V Higher Efficiency Extending Battery Life 25 V 1.2 A 299 mW @ 2.7 V AEC-Q101 Qualified and PPAP Capable - NVJS4405N These Devices are Pb-Free and are RoHS Co... See More ⇒
Detailed specifications: NTJD4158CT1G, NTJS3151PT1G, NTJS3151PT2, NTJS3157NT1G, NTJS3157NT2, NTJS3157NT4, NTJS4151PT1, NTJS4151PT1G, AOD4184A, NTJS4405NT1, NTJS4405NT4, NTK3043NAT5G, NTK3043NT1G, NTK3134NT1G, NTK3139PT1G, NTK3142PT1G, NTLGF3402PT1G
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