NTJS4160NT1G
MOSFET. Datasheet pdf. Equivalent
Type Designator: NTJS4160NT1G
Marking Code: T7
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.3
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4
V
|Id|ⓘ - Maximum Drain Current: 1.8
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 2.75
nC
trⓘ - Rise Time: 7.2
nS
Cossⓘ -
Output Capacitance: 62
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06
Ohm
Package:
SOT-363
NTJS4160NT1G
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTJS4160NT1G
Datasheet (PDF)
..1. Size:81K onsemi
ntjs4160n-d ntjs4160nt1g.pdf 
NTJS4160NPower MOSFET30 V, 3.2 A, Single N-Channel, SC-88Features Offers an Low RDS(on) Solution in the SC-88 Package Low Profile (
8.1. Size:143K onsemi
ntjs4151p ntjs4151pt1 ntjs4151pt1g.pdf
NTJS4151PTrench Power MOSFET-20 V, -4.2 A, Single P-Channel, SC-88Features Leading Trench Technology for Low RDS(ON) Extending Battery Life http://onsemi.com SC-88 Small Outline (2x2 mm) for Maximum Circuit BoardV(BR)DSS RDS(on) Typ ID MaxUtilization, Same as SC-70-647 mW @ -4.5 V Gate Diodes for ESD Protection-20 V 70 mW @ -2.5 V -4.2 A Pb-Free Package is Avai
9.1. Size:102K onsemi
ntjs4405n.pdf
NTJS4405NSmall Signal MOSFET25 V, 1.2 A, Single, N-Channel, SC-88Features Advance Planar Technology for Fast Switching, Low RDS(on)http://onsemi.com Higher Efficiency Extending Battery LifeV(BR)DSS RDS(on) Typ ID Max Pb-Free Packages are Available249 mW @ 4.5 V25 V 1.2 AApplications299 mW @ 2.7 V Boost and Buck Converter Load Switch N-Channel Batt
9.2. Size:191K onsemi
ntjs4405n nvjs4405n.pdf
NTJS4405N, NVJS4405NMOSFET Single,N-Channel, Small Signal,SC-8825 V, 1.2 Ahttp://onsemi.comFeaturesV(BR)DSS RDS(on) Typ ID Max Advance Planar Technology for Fast Switching, Low RDS(on)249 mW @ 4.5 V Higher Efficiency Extending Battery Life25 V 1.2 A299 mW @ 2.7 V AEC-Q101 Qualified and PPAP Capable - NVJS4405N These Devices are Pb-Free and are RoHS Co
9.3. Size:126K onsemi
ntjs4405nt1 ntjs4405nt4 nvjs4405n.pdf
NTJS4405N, NVJS4405NSmall Signal MOSFET25 V, 1.2 A, Single, N-Channel, SC-88Features Advance Planar Technology for Fast Switching, Low RDS(on)http://onsemi.com Higher Efficiency Extending Battery LifeV(BR)DSS RDS(on) Typ ID Max AEC-Q101 Qualified and PPAP Capable - NVJS4405N249 mW @ 4.5 V These Devices are Pb-Free and are RoHS Compliant25 V 1.2 A299 mW @ 2.7
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