NTLGF3501NT2G Datasheet. Specs and Replacement

Type Designator: NTLGF3501NT2G  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.14 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 2.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13.6 nS

Cossⓘ - Output Capacitance: 67 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm

Package: DFN6

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NTLGF3501NT2G datasheet

 ..1. Size:87K  onsemi
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NTLGF3501NT2G

NTLGF3501N Power MOSFET and Schottky Diode 20 V, 4.6 A FETKY), N-Channel, 2.0 A Schottky Barrier Diode, DFN6 http //onsemi.com Features MOSFET Flat Lead 6 Terminal Package 3x3x1 mm V(BR)DSS RDS(on) TYP ID TYP Reduced Gate Charge to Improve Switching Response Enhanced Thermal Characteristics 20 V 70 mW @ 4.5 V 4.6 A This is a Pb-Free Device SCHOTTKY DIODE Applicat... See More ⇒

 8.1. Size:86K  onsemi
 ntlgf3402p ntlgf3402pt1g.pdf pdf_icon

NTLGF3501NT2G

NTLGF3402P Power MOSFET and Schottky Diode -20 V, -3.9 A FETKY), P-Channel, 2.0 A Schottky Barrier Diode, DFN6 http //onsemi.com Features MOSFET Flat Lead 6 Terminal Package 3x3x1 mm V(BR)DSS RDS(on) TYP ID MAX Enhanced Thermal Characteristics Low VF and Low Leakage Schottky Diode -20 V 110 mW @ -4.5 V -3.9 A Reduced Gate Charge to Improve Switching Response SCHOT... See More ⇒

Detailed specifications: NTJS4405NT1, NTJS4405NT4, NTK3043NAT5G, NTK3043NT1G, NTK3134NT1G, NTK3139PT1G, NTK3142PT1G, NTLGF3402PT1G, IRF740, NTLJD3119CTAG, NTLJD3119CTBG, NTLJD3182FZTAG, NTLJD3182FZTBG, NTLJF3117PT1G, NTLJF3117PTAG, NTLJF3118NTAG, NTLJF4156NT1G

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