All MOSFET. NTLGF3501NT2G Datasheet

 

NTLGF3501NT2G Datasheet and Replacement


   Type Designator: NTLGF3501NT2G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.14 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 2.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13.6 nS
   Cossⓘ - Output Capacitance: 67 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: DFN6
 

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NTLGF3501NT2G Datasheet (PDF)

 ..1. Size:87K  onsemi
 ntlgf3501nt2g.pdf pdf_icon

NTLGF3501NT2G

NTLGF3501NPower MOSFET andSchottky Diode20 V, 4.6 A FETKY), N-Channel, 2.0 A Schottky Barrier Diode, DFN6http://onsemi.comFeaturesMOSFET Flat Lead 6 Terminal Package 3x3x1 mmV(BR)DSS RDS(on) TYP ID TYP Reduced Gate Charge to Improve Switching Response Enhanced Thermal Characteristics20 V 70 mW @ 4.5 V 4.6 A This is a Pb-Free DeviceSCHOTTKY DIODEApplicat

 8.1. Size:86K  onsemi
 ntlgf3402p ntlgf3402pt1g.pdf pdf_icon

NTLGF3501NT2G

NTLGF3402PPower MOSFET andSchottky Diode-20 V, -3.9 A FETKY), P-Channel, 2.0 A Schottky Barrier Diode, DFN6http://onsemi.comFeaturesMOSFET Flat Lead 6 Terminal Package 3x3x1 mmV(BR)DSS RDS(on) TYP ID MAX Enhanced Thermal Characteristics Low VF and Low Leakage Schottky Diode-20 V 110 mW @ -4.5 V -3.9 A Reduced Gate Charge to Improve Switching ResponseSCHOT

Datasheet: NTJS4405NT1 , NTJS4405NT4 , NTK3043NAT5G , NTK3043NT1G , NTK3134NT1G , NTK3139PT1G , NTK3142PT1G , NTLGF3402PT1G , IRF840 , NTLJD3119CTAG , NTLJD3119CTBG , NTLJD3182FZTAG , NTLJD3182FZTBG , NTLJF3117PT1G , NTLJF3117PTAG , NTLJF3118NTAG , NTLJF4156NT1G .

History: 2SK944 | DMG8880LSS | IXFV110N10P | CS65N20-30 | SQM90142E | IPB120N08S4-03 | C3M0065100K

Keywords - NTLGF3501NT2G MOSFET datasheet

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