All MOSFET. NTLJF3117PT1G Datasheet

 

NTLJF3117PT1G MOSFET. Datasheet pdf. Equivalent


   Type Designator: NTLJF3117PT1G
   Marking Code: JH
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.71 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 2.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 5.5 nC
   trⓘ - Rise Time: 13.2 nS
   Cossⓘ - Output Capacitance: 91 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: WDFN6

 NTLJF3117PT1G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NTLJF3117PT1G Datasheet (PDF)

 ..1. Size:112K  onsemi
 ntljf3117p-d ntljf3117pt1g ntljf3117ptag.pdf

NTLJF3117PT1G NTLJF3117PT1G

NTLJF3117PPower MOSFET andSchottky Diode-20 V, -4.1 A, P-Channel, with 2.0 ASchottky Barrier Diode, 2x2 mm,mCool] Packagehttp://onsemi.comFeaturesMOSFET FETKYt Configuration with MOSFET plus Low Vf Schottky Diode mCOOLt Package Provides Exposed Drain Pad for ExcellentV(BR)DSS RDS(on) MAX ID MAX (Note 1)Thermal Conduction100 mW @ -4.5 V 2x2 mm Footprint Same

 4.1. Size:112K  onsemi
 ntljf3117p.pdf

NTLJF3117PT1G NTLJF3117PT1G

NTLJF3117PPower MOSFET andSchottky Diode-20 V, -4.1 A, P-Channel, with 2.0 ASchottky Barrier Diode, 2x2 mm,mCool] Packagehttp://onsemi.comFeaturesMOSFET FETKYt Configuration with MOSFET plus Low Vf Schottky Diode mCOOLt Package Provides Exposed Drain Pad for ExcellentV(BR)DSS RDS(on) MAX ID MAX (Note 1)Thermal Conduction100 mW @ -4.5 V 2x2 mm Footprint Same

 6.1. Size:110K  onsemi
 ntljf3118n ntljf3118ntag.pdf

NTLJF3117PT1G NTLJF3117PT1G

NTLJF3118NPower MOSFET andSchottky Diode20 V, 4.6 A, mCool] N-Channel, with2.0 A Schottky Barrier Diode, 2x2 mmhttp://onsemi.comWDFN PackageMOSFETFeaturesV(BR)DSS RDS(on) Max ID Max WDFN 2x2 mm Package Provides Exposed Drain Pad for Excellent Thermal Conduction65 mW @ 4.5 V 3.8 A Footprint Same as SC-88 Package20 V 85 mW @ 2.5 V 2.0 A 1.8 V VGS Rated RDS(o

 9.1. Size:99K  onsemi
 ntljf4156n ntljf4156nt1g ntljf4156ntag.pdf

NTLJF3117PT1G NTLJF3117PT1G

NTLJF4156NPower MOSFET andSchottky Diode30 V, 4.6 A, mCool] N-Channel, with2.0 A Schottky Barrier Diode, 2x2 mmhttp://onsemi.comWDFN PackageMOSFETFeaturesV(BR)DSS RDS(on) MAX ID MAX (Note 1) WDFN Package Provides Exposed Drain Pad for Excellent ThermalConduction70 mW @ 4.5 V Co-Packaged MOSFET and Schottky For Easy Circuit Layout30 V 90 mW @ 2.5 V 4.6 A RD

 9.2. Size:143K  onsemi
 ntljf4156n.pdf

NTLJF3117PT1G NTLJF3117PT1G

NTLJF4156NMOSFET Power,N-Channel with SchottkyBarrier Diode, SchottkyDiode, mCool, WDFNhttp://onsemi.com2X2 mmMOSFET30 V, 4.6 A, 2.0 AV(BR)DSS RDS(on) MAX ID MAX (Note 1)70 mW @ 4.5 VFeatures30 V 90 mW @ 2.5 V 4.6 A WDFN Package Provides Exposed Drain Pad for Excellent ThermalConduction125 mW @ 1.8 V Co-Packaged MOSFET and Schottky For Easy Circuit Layo

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

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