NTLJF3117PT1G Datasheet. Specs and Replacement

Type Designator: NTLJF3117PT1G  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.71 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 2.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13.2 nS

Cossⓘ - Output Capacitance: 91 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: WDFN6

NTLJF3117PT1G substitution

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NTLJF3117PT1G datasheet

 ..1. Size:112K  onsemi
 ntljf3117p-d ntljf3117pt1g ntljf3117ptag.pdf pdf_icon

NTLJF3117PT1G

NTLJF3117P Power MOSFET and Schottky Diode -20 V, -4.1 A, P-Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm, mCool] Package http //onsemi.com Features MOSFET FETKYt Configuration with MOSFET plus Low Vf Schottky Diode mCOOLt Package Provides Exposed Drain Pad for Excellent V(BR)DSS RDS(on) MAX ID MAX (Note 1) Thermal Conduction 100 mW @ -4.5 V 2x2 mm Footprint Same ... See More ⇒

 4.1. Size:112K  onsemi
 ntljf3117p.pdf pdf_icon

NTLJF3117PT1G

NTLJF3117P Power MOSFET and Schottky Diode -20 V, -4.1 A, P-Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm, mCool] Package http //onsemi.com Features MOSFET FETKYt Configuration with MOSFET plus Low Vf Schottky Diode mCOOLt Package Provides Exposed Drain Pad for Excellent V(BR)DSS RDS(on) MAX ID MAX (Note 1) Thermal Conduction 100 mW @ -4.5 V 2x2 mm Footprint Same ... See More ⇒

 6.1. Size:110K  onsemi
 ntljf3118n ntljf3118ntag.pdf pdf_icon

NTLJF3117PT1G

NTLJF3118N Power MOSFET and Schottky Diode 20 V, 4.6 A, mCool] N-Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm http //onsemi.com WDFN Package MOSFET Features V(BR)DSS RDS(on) Max ID Max WDFN 2x2 mm Package Provides Exposed Drain Pad for Excellent Thermal Conduction 65 mW @ 4.5 V 3.8 A Footprint Same as SC-88 Package 20 V 85 mW @ 2.5 V 2.0 A 1.8 V VGS Rated RDS(o... See More ⇒

 9.1. Size:99K  onsemi
 ntljf4156n ntljf4156nt1g ntljf4156ntag.pdf pdf_icon

NTLJF3117PT1G

NTLJF4156N Power MOSFET and Schottky Diode 30 V, 4.6 A, mCool] N-Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm http //onsemi.com WDFN Package MOSFET Features V(BR)DSS RDS(on) MAX ID MAX (Note 1) WDFN Package Provides Exposed Drain Pad for Excellent Thermal Conduction 70 mW @ 4.5 V Co-Packaged MOSFET and Schottky For Easy Circuit Layout 30 V 90 mW @ 2.5 V 4.6 A RD... See More ⇒

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Detailed specifications: NTK3139PT1G, NTK3142PT1G, NTLGF3402PT1G, NTLGF3501NT2G, NTLJD3119CTAG, NTLJD3119CTBG, NTLJD3182FZTAG, NTLJD3182FZTBG, IRFP460, NTLJF3117PTAG, NTLJF3118NTAG, NTLJF4156NT1G, NTLJF4156NTAG, NTLJS1102PTAG, NTLJS1102PTBG, NTLJS2103PTAG, NTLJS2103PTBG

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