NTLJF3118NTAG
MOSFET. Datasheet pdf. Equivalent
Type Designator: NTLJF3118NTAG
Marking Code: JK
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.7
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 2.6
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 3.7
nC
trⓘ - Rise Time: 4.7
nS
Cossⓘ -
Output Capacitance: 72
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.065
Ohm
Package: WDFN6
NTLJF3118NTAG
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTLJF3118NTAG
Datasheet (PDF)
..1. Size:110K onsemi
ntljf3118n ntljf3118ntag.pdf 
NTLJF3118NPower MOSFET andSchottky Diode20 V, 4.6 A, mCool] N-Channel, with2.0 A Schottky Barrier Diode, 2x2 mmhttp://onsemi.comWDFN PackageMOSFETFeaturesV(BR)DSS RDS(on) Max ID Max WDFN 2x2 mm Package Provides Exposed Drain Pad for Excellent Thermal Conduction65 mW @ 4.5 V 3.8 A Footprint Same as SC-88 Package20 V 85 mW @ 2.5 V 2.0 A 1.8 V VGS Rated RDS(o
6.1. Size:112K onsemi
ntljf3117p-d ntljf3117pt1g ntljf3117ptag.pdf
NTLJF3117PPower MOSFET andSchottky Diode-20 V, -4.1 A, P-Channel, with 2.0 ASchottky Barrier Diode, 2x2 mm,mCool] Packagehttp://onsemi.comFeaturesMOSFET FETKYt Configuration with MOSFET plus Low Vf Schottky Diode mCOOLt Package Provides Exposed Drain Pad for ExcellentV(BR)DSS RDS(on) MAX ID MAX (Note 1)Thermal Conduction100 mW @ -4.5 V 2x2 mm Footprint Same
6.2. Size:112K onsemi
ntljf3117p.pdf
NTLJF3117PPower MOSFET andSchottky Diode-20 V, -4.1 A, P-Channel, with 2.0 ASchottky Barrier Diode, 2x2 mm,mCool] Packagehttp://onsemi.comFeaturesMOSFET FETKYt Configuration with MOSFET plus Low Vf Schottky Diode mCOOLt Package Provides Exposed Drain Pad for ExcellentV(BR)DSS RDS(on) MAX ID MAX (Note 1)Thermal Conduction100 mW @ -4.5 V 2x2 mm Footprint Same
9.1. Size:99K onsemi
ntljf4156n ntljf4156nt1g ntljf4156ntag.pdf
NTLJF4156NPower MOSFET andSchottky Diode30 V, 4.6 A, mCool] N-Channel, with2.0 A Schottky Barrier Diode, 2x2 mmhttp://onsemi.comWDFN PackageMOSFETFeaturesV(BR)DSS RDS(on) MAX ID MAX (Note 1) WDFN Package Provides Exposed Drain Pad for Excellent ThermalConduction70 mW @ 4.5 V Co-Packaged MOSFET and Schottky For Easy Circuit Layout30 V 90 mW @ 2.5 V 4.6 A RD
9.2. Size:143K onsemi
ntljf4156n.pdf
NTLJF4156NMOSFET Power,N-Channel with SchottkyBarrier Diode, SchottkyDiode, mCool, WDFNhttp://onsemi.com2X2 mmMOSFET30 V, 4.6 A, 2.0 AV(BR)DSS RDS(on) MAX ID MAX (Note 1)70 mW @ 4.5 VFeatures30 V 90 mW @ 2.5 V 4.6 A WDFN Package Provides Exposed Drain Pad for Excellent ThermalConduction125 mW @ 1.8 V Co-Packaged MOSFET and Schottky For Easy Circuit Layo
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