All MOSFET. NTMD4884NFR2G Datasheet

 

NTMD4884NFR2G MOSFET. Datasheet pdf. Equivalent


   Type Designator: NTMD4884NFR2G
   Marking Code: 4884NF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.77 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 3.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 2.8 nC
   trⓘ - Rise Time: 6.5 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.048 Ohm
   Package: SOIC-8

 NTMD4884NFR2G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NTMD4884NFR2G Datasheet (PDF)

 ..1. Size:91K  onsemi
 ntmd4884nf ntmd4884nfr2g.pdf

NTMD4884NFR2G NTMD4884NFR2G

NTMD4884NFPower MOSFET andSchottky Diode30 V, 5.7 A, Single N-Channel with 30 V,2.8 A, Schottky Barrier DiodeFeatures FETKYt Surface Mount Package Saves Board Spacehttp://onsemi.com Independent Pin-Out for MOSFET and Schottky Allowing forDesign Flexibility N-CHANNEL MOSFET Low RDS(on) MOSFET and Low VF Schottky to MinimizeV(BR)DSS RDS(on) MaxID MaxConduction L

 8.1. Size:135K  onsemi
 ntmd4820n.pdf

NTMD4884NFR2G NTMD4884NFR2G

NTMD4820NPower MOSFET30 V, 8 A, Dual N-Channel, SOIC-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Dual SOIC-8 Surface Mount Package Saves Board SpaceV(BR)DSS RDS(on) MaxID Max20 mW @ 10 VApplications30 V 8 A Disk Drives27 mW @ 4.5 V

 8.2. Size:135K  onsemi
 ntmd4840n.pdf

NTMD4884NFR2G NTMD4884NFR2G

NTMD4840NPower MOSFET30 V, 7.5 A, Dual N-Channel, SOIC-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Dual SOIC-8 Surface Mount Package Saves Board SpaceV(BR)DSS RDS(on) MaxID Max This is a Pb-Free Device24 mW @ 10 V30 V 7.5 AApplications

 9.1. Size:156K  onsemi
 ntmd4n03r2.pdf

NTMD4884NFR2G NTMD4884NFR2G

NTMD4N03R2Power MOSFET4 Amps, 30 VoltsN-Channel SO-8 DualFeatures http://onsemi.com Designed for use in low voltage, high speed switching applications Ultra Low On-Resistance ProvidesVDSS RDS(ON) Typ ID MaxHigher Efficiency and Extends Battery Life30 V 48 mW @ VGS = 10 V 4.0 A- RDS(on) = 0.048 W, VGS = 10 V (Typ)- RDS(on) = 0.065 W, VGS = 4.5 V (Typ) Miniature S

 9.2. Size:116K  onsemi
 ntmd4n03 nvmd4n03.pdf

NTMD4884NFR2G NTMD4884NFR2G

NTMD4N03, NVMD4N03Power MOSFET4 A, 30 V, N-Channel SO-8 DualFeatures Designed for use in low voltage, high speed switching applications Ultra Low On-Resistance Provideshttp://onsemi.comHigher Efficiency and Extends Battery Life- RDS(on) = 0.048 W, VGS = 10 V (Typ)- RDS(on) = 0.065 W, VGS = 4.5 V (Typ)VDSS RDS(ON) Typ ID Max Miniature SO-8 Surface Mount Package - S

 9.3. Size:98K  onsemi
 ntmd4184pf ntmd4184pfr2g.pdf

NTMD4884NFR2G NTMD4884NFR2G

NTMD4184PFPower MOSFET andSchottky Diode-30 V, -4.0 A, Single P-Channel with 20 V,2.2 A, Schottky Barrier DiodeFeatures FETKYt Surface Mount Package Saves Board Spacehttp://onsemi.com Independent Pin-Out for MOSFET and Schottky Allowing forDesign Flexibility P-CHANNEL MOSFET Low RDS(on) MOSFET and Low VF Schottky to MinimizeV(BR)DSS RDS(on) MaxID MaxConduction

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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