NTMD5836NLR2G Datasheet. Specs and Replacement
Type Designator: NTMD5836NLR2G 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 315 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: SOIC-8
NTMD5836NLR2G substitution
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NTMD5836NLR2G datasheet
ntmd5836nlr2g.pdf
NTMD5836NL Power MOSFET 40 V, Dual N-Channel, SOIC-8 Features Asymmetrical N Channels http //onsemi.com Low RDS(on) Low Capacitance N-Channel 1 N-Channel 2 Optimized Gate Charge D1 D2 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant G1 G2 ID Max (Notes 1 and 2) V(BR)DSS RDS(on) Max S1 S2 Channel 1 40 V 12 mW @ 10 V 11 A 16 mW @ 4.5 V... See More ⇒
ntmd5836nl.pdf
NTMD5836NL Power MOSFET 40 V, Dual N-Channel, SOIC-8 Features Asymmetrical N Channels http //onsemi.com Low RDS(on) Low Capacitance Optimized Gate Charge N-Channel 1 N-Channel 2 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS D1 D2 Compliant ID Max G1 G2 (Notes 1 and 2) V(BR)DSS RDS(on) Max Channel 1 40 V 12 mW @ 10 V 11 A S1 S2 16 mW @ 4.5 V ... See More ⇒
ntmd5838nl.pdf
NTMD5838NL Power MOSFET 40 V, 8.9 A, 25 mW, Dual N-Channel SO-8 Features Low RDS(on) Low Capacitance http //onsemi.com Optimized Gate Charge These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise stated) 25 mW @ 10 V 40 V 8.9 A Parameter Symbol Value Unit 30.8 mW @ 4.5 V Dra... See More ⇒
Detailed specifications: NTLUS3A90PZTBG, NTLUS3C18PZ, NTLUS4930N, NTLUS4C12N, NTLUS4C16N, NTMD4184PFR2G, NTMD4884NFR2G, NTMD4N03, IRFB3607, NTMD6N03R2G, NTMD6P02R2G, NTMFD4901NF, NTMFD4902NF, NTMFD4C20N, NTMFD4C85N, NTMFD4C86N, NTMFD4C87N
Keywords - NTMD5836NLR2G MOSFET specs
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