NTMD5836NLR2G MOSFET. Datasheet pdf. Equivalent
Type Designator: NTMD5836NLR2G
Marking Code: 5836NL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 9 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 36 nC
trⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 315 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: SOIC-8
NTMD5836NLR2G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTMD5836NLR2G Datasheet (PDF)
ntmd5836nlr2g.pdf
NTMD5836NLPower MOSFET40 V, Dual N-Channel, SOIC-8Features Asymmetrical N Channelshttp://onsemi.com Low RDS(on) Low CapacitanceN-Channel 1 N-Channel 2 Optimized Gate ChargeD1 D2 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantG1 G2ID Max(Notes 1 and 2)V(BR)DSS RDS(on) MaxS1 S2Channel 1 40 V 12 mW @ 10 V 11 A16 mW @ 4.5 V
ntmd5836nl.pdf
NTMD5836NLPower MOSFET40 V, Dual N-Channel, SOIC-8Features Asymmetrical N Channelshttp://onsemi.com Low RDS(on) Low Capacitance Optimized Gate ChargeN-Channel 1 N-Channel 2 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS D1 D2CompliantID MaxG1 G2(Notes 1 and 2)V(BR)DSS RDS(on) MaxChannel 1 40 V 12 mW @ 10 V 11 AS1 S216 mW @ 4.5 V
ntmd5838nl.pdf
NTMD5838NLPower MOSFET40 V, 8.9 A, 25 mW, Dual N-Channel SO-8Features Low RDS(on) Low Capacitancehttp://onsemi.com Optimized Gate Charge These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise stated)25 mW @ 10 V40 V 8.9 AParameter Symbol Value Unit30.8 mW @ 4.5 VDra
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
