NTMFD4C20N
MOSFET. Datasheet pdf. Equivalent
Type Designator: NTMFD4C20N
Marking Code: 4902NF
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.09
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.1
V
|Id|ⓘ - Maximum Drain Current: 9.1
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 9.3
nC
trⓘ - Rise Time: 33
nS
Cossⓘ -
Output Capacitance: 430
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0073
Ohm
Package:
DFN8
NTMFD4C20N
Datasheet (PDF)
..1. Size:156K onsemi
ntmfd4c20n.pdf
NTMFD4C20NDual N-Channel PowerMOSFET30 V, High Side 18 A / Low Side 27 A, DualN-Channel SO8FLhttp://onsemi.comFeaturesV(BR)DSS RDS(ON) MAX ID MAX Co-Packaged Power Stage Solution to Minimize Board Space7.3 mW @ 10 V Minimized Parasitic InductancesQ1 Top FET18 A Optimized Devices to Reduce Power Losses30 V 10.8 mW @ 4.5 V These Devices are Pb-Free, Halog
7.1. Size:117K onsemi
ntmfd4c87n.pdf
NTMFD4C87NPowerPhase, DualN-Channel SO8FL30 V, High Side 20 A / Low Side 26 AFeatures Co-Packaged Power Stage Solution to Minimize Board Spacewww.onsemi.com Minimized Parasitic Inductances Optimized Devices to Reduce Power LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS5.4 mW @ 10 VQ1 Top FETCompliant20 A3
7.2. Size:130K onsemi
ntmfd4c85n.pdf
NTMFD4C85NPowerPhase, DualN-Channel SO8FL30 V, High Side 25 A / Low Side 49 AFeatures Co-Packaged Power Stage Solution to Minimize Board Spacewww.onsemi.com Minimized Parasitic Inductances Optimized Devices to Reduce Power LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS3.0 mW @ 10 VQ1 Top FETCompliant25 A3
7.4. Size:128K onsemi
ntmfd4c86n.pdf
NTMFD4C86NPowerPhase, DualN-Channel SO8FL30 V, High Side 20 A / Low Side 32 AFeatures Co-Packaged Power Stage Solution to Minimize Board Spacewww.onsemi.com Minimized Parasitic Inductances Optimized Devices to Reduce Power LossesV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS5.4 mW @ 10 VCompliant Q1 Top FET20 A30
7.5. Size:123K onsemi
ntmfd4c88n.pdf
NTMFD4C88NPowerPhase, DualN-Channel SO8FL30 V, High Side 20 A / Low Side 24 AFeatures Co-Packaged Power Stage Solution to Minimize Board Spacewww.onsemi.com Minimized Parasitic Inductances Optimized Devices to Reduce Power LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS5.4 mW @ 10 VCompliant Q1 Top FET20 A30
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