NTMFD4C20N Datasheet. Specs and Replacement
Type Designator: NTMFD4C20N 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.09 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 9.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 33 nS
Cossⓘ - Output Capacitance: 430 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0073 Ohm
Package: DFN8
NTMFD4C20N substitution
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NTMFD4C20N datasheet
ntmfd4c20n.pdf
NTMFD4C20N Dual N-Channel Power MOSFET 30 V, High Side 18 A / Low Side 27 A, Dual N-Channel SO8FL http //onsemi.com Features V(BR)DSS RDS(ON) MAX ID MAX Co-Packaged Power Stage Solution to Minimize Board Space 7.3 mW @ 10 V Minimized Parasitic Inductances Q1 Top FET 18 A Optimized Devices to Reduce Power Losses 30 V 10.8 mW @ 4.5 V These Devices are Pb-Free, Halog... See More ⇒
ntmfd4c87n.pdf
NTMFD4C87N PowerPhase, Dual N-Channel SO8FL 30 V, High Side 20 A / Low Side 26 A Features Co-Packaged Power Stage Solution to Minimize Board Space www.onsemi.com Minimized Parasitic Inductances Optimized Devices to Reduce Power Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 5.4 mW @ 10 V Q1 Top FET Compliant 20 A 3... See More ⇒
ntmfd4c85n.pdf
NTMFD4C85N PowerPhase, Dual N-Channel SO8FL 30 V, High Side 25 A / Low Side 49 A Features Co-Packaged Power Stage Solution to Minimize Board Space www.onsemi.com Minimized Parasitic Inductances Optimized Devices to Reduce Power Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 3.0 mW @ 10 V Q1 Top FET Compliant 25 A 3... See More ⇒
Detailed specifications: NTMD4184PFR2G, NTMD4884NFR2G, NTMD4N03, NTMD5836NLR2G, NTMD6N03R2G, NTMD6P02R2G, NTMFD4901NF, NTMFD4902NF, AON7506, NTMFD4C85N, NTMFD4C86N, NTMFD4C87N, NTMFD4C88N, NTMFS4108NT1G, NTMFS4119NT1G, NTMFS4120NT1G, NTMFS4121NT1G
Keywords - NTMFD4C20N MOSFET specs
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