NTMFD4C85N Datasheet. Specs and Replacement

Type Designator: NTMFD4C85N  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.13 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 37 nS

Cossⓘ - Output Capacitance: 1230 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm

Package: DFN8

NTMFD4C85N substitution

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NTMFD4C85N datasheet

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NTMFD4C85N

NTMFD4C85N PowerPhase, Dual N-Channel SO8FL 30 V, High Side 25 A / Low Side 49 A Features Co-Packaged Power Stage Solution to Minimize Board Space www.onsemi.com Minimized Parasitic Inductances Optimized Devices to Reduce Power Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 3.0 mW @ 10 V Q1 Top FET Compliant 25 A 3... See More ⇒

 6.1. Size:117K  onsemi
 ntmfd4c87n.pdf pdf_icon

NTMFD4C85N

NTMFD4C87N PowerPhase, Dual N-Channel SO8FL 30 V, High Side 20 A / Low Side 26 A Features Co-Packaged Power Stage Solution to Minimize Board Space www.onsemi.com Minimized Parasitic Inductances Optimized Devices to Reduce Power Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 5.4 mW @ 10 V Q1 Top FET Compliant 20 A 3... See More ⇒

 6.2. Size:128K  onsemi
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NTMFD4C85N

NTMFD4C86N PowerPhase, Dual N-Channel SO8FL 30 V, High Side 20 A / Low Side 32 A Features Co-Packaged Power Stage Solution to Minimize Board Space www.onsemi.com Minimized Parasitic Inductances Optimized Devices to Reduce Power Losses V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 5.4 mW @ 10 V Compliant Q1 Top FET 20 A 30... See More ⇒

 6.3. Size:123K  onsemi
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NTMFD4C85N

NTMFD4C88N PowerPhase, Dual N-Channel SO8FL 30 V, High Side 20 A / Low Side 24 A Features Co-Packaged Power Stage Solution to Minimize Board Space www.onsemi.com Minimized Parasitic Inductances Optimized Devices to Reduce Power Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 5.4 mW @ 10 V Compliant Q1 Top FET 20 A 30... See More ⇒

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Detailed specifications: NTMD4884NFR2G, NTMD4N03, NTMD5836NLR2G, NTMD6N03R2G, NTMD6P02R2G, NTMFD4901NF, NTMFD4902NF, NTMFD4C20N, STP80NF70, NTMFD4C86N, NTMFD4C87N, NTMFD4C88N, NTMFS4108NT1G, NTMFS4119NT1G, NTMFS4120NT1G, NTMFS4121NT1G, NTMFS4122NT1G

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