NTMFS4839NHT1G
MOSFET. Datasheet pdf. Equivalent
Type Designator: NTMFS4839NHT1G
Marking Code: 4839NH
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.87
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 9.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 12.9
nC
trⓘ - Rise Time: 22.5
nS
Cossⓘ -
Output Capacitance: 355
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0055
Ohm
Package:
SO-8FL
NTMFS4839NHT1G
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTMFS4839NHT1G
Datasheet (PDF)
..1. Size:109K onsemi
ntmfs4839nht1g.pdf 
NTMFS4839NHPower MOSFET30 V, 64 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http://onsemi.com Low RG These are Pb-Free DevicesV(BR)DSS RDS(ON) MAX ID MAXApplications5.5 mW @ 10 V Refer to Application Note AND8195/D30 V64 A
3.1. Size:139K onsemi
ntmfs4839nh.pdf
NTMFS4839NHPower MOSFET30 V, 64 A, Single N-Channel, SO-8FLFeatures Low RDS(ON) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http://onsemi.com Low RG These are Pb-Free Devices*V(BR)DSS RDS(ON) MAX ID MAXApplications5.5 mW @ 10 V Refer to Application Note AND8195/D30 V64 A
4.1. Size:139K onsemi
ntmfs4839n.pdf
NTMFS4839NPower MOSFET30 V, 66 A, Single N-Channel, SO-8FLFeatures Low RDS(ON) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices*V(BR)DSS RDS(ON) MAX ID MAXApplications5.5 mW @ 10 V Refer to Application Note AND8195/D30 V66 A9.5 mW @ 4.
4.2. Size:109K onsemi
ntmfs4839nt1g.pdf
NTMFS4839NPower MOSFET30 V, 66 A, Single N-Channel, SO-8FLFeatures Low RDS(ON) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free DevicesV(BR)DSS RDS(ON) MAX ID MAXApplications5.5 mW @ 10 V Refer to Application Note AND8195/D30 V66 A9.5 mW @ 4.5
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