All MOSFET. NTMFS4839NHT1G Datasheet

 

NTMFS4839NHT1G Datasheet and Replacement


   Type Designator: NTMFS4839NHT1G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.87 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 9.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 22.5 nS
   Cossⓘ - Output Capacitance: 355 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: SO-8FL
 

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NTMFS4839NHT1G Datasheet (PDF)

 ..1. Size:109K  onsemi
ntmfs4839nht1g.pdf pdf_icon

NTMFS4839NHT1G

NTMFS4839NHPower MOSFET30 V, 64 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http://onsemi.com Low RG These are Pb-Free DevicesV(BR)DSS RDS(ON) MAX ID MAXApplications5.5 mW @ 10 V Refer to Application Note AND8195/D30 V64 A

 3.1. Size:139K  onsemi
ntmfs4839nh.pdf pdf_icon

NTMFS4839NHT1G

NTMFS4839NHPower MOSFET30 V, 64 A, Single N-Channel, SO-8FLFeatures Low RDS(ON) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http://onsemi.com Low RG These are Pb-Free Devices*V(BR)DSS RDS(ON) MAX ID MAXApplications5.5 mW @ 10 V Refer to Application Note AND8195/D30 V64 A

 4.1. Size:139K  onsemi
ntmfs4839n.pdf pdf_icon

NTMFS4839NHT1G

NTMFS4839NPower MOSFET30 V, 66 A, Single N-Channel, SO-8FLFeatures Low RDS(ON) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices*V(BR)DSS RDS(ON) MAX ID MAXApplications5.5 mW @ 10 V Refer to Application Note AND8195/D30 V66 A9.5 mW @ 4.

 4.2. Size:109K  onsemi
ntmfs4839nt1g.pdf pdf_icon

NTMFS4839NHT1G

NTMFS4839NPower MOSFET30 V, 66 A, Single N-Channel, SO-8FLFeatures Low RDS(ON) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free DevicesV(BR)DSS RDS(ON) MAX ID MAXApplications5.5 mW @ 10 V Refer to Application Note AND8195/D30 V66 A9.5 mW @ 4.5

Datasheet: NTMFS4825NFET1G , NTMFS4833NST1G , NTMFS4833NT1G , NTMFS4834NT1G , NTMFS4835NT1G , NTMFS4836NT1G , NTMFS4837NHT1G , NTMFS4837NT1G , IRF520 , NTMFS4839NT1G , NTMFS4841NHT1G , NTMFS4841NT1G , NTMFS4845NT1G , NTMFS4846NT1G , NTMFS4847NAT1G , NTMFS4847NT1G , NTMFS4849NT1G .

History: AON6924 | 2SK2539 | SIHFB9N65A | SUM110N08-07P | SVGP066R1NL5 | FTK4N60D | APT53N60BC6

Keywords - NTMFS4839NHT1G MOSFET datasheet

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