NTMFS4839NHT1G Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: NTMFS4839NHT1G
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 0.87 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 9.5 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 22.5 ns
Cossⓘ - Выходная емкость: 355 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0055 Ohm
Тип корпуса: SO-8FL
Аналог (замена) для NTMFS4839NHT1G
NTMFS4839NHT1G Datasheet (PDF)
ntmfs4839nht1g.pdf

NTMFS4839NHPower MOSFET30 V, 64 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http://onsemi.com Low RG These are Pb-Free DevicesV(BR)DSS RDS(ON) MAX ID MAXApplications5.5 mW @ 10 V Refer to Application Note AND8195/D30 V64 A
ntmfs4839nh.pdf

NTMFS4839NHPower MOSFET30 V, 64 A, Single N-Channel, SO-8FLFeatures Low RDS(ON) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http://onsemi.com Low RG These are Pb-Free Devices*V(BR)DSS RDS(ON) MAX ID MAXApplications5.5 mW @ 10 V Refer to Application Note AND8195/D30 V64 A
ntmfs4839n.pdf

NTMFS4839NPower MOSFET30 V, 66 A, Single N-Channel, SO-8FLFeatures Low RDS(ON) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices*V(BR)DSS RDS(ON) MAX ID MAXApplications5.5 mW @ 10 V Refer to Application Note AND8195/D30 V66 A9.5 mW @ 4.
ntmfs4839nt1g.pdf

NTMFS4839NPower MOSFET30 V, 66 A, Single N-Channel, SO-8FLFeatures Low RDS(ON) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free DevicesV(BR)DSS RDS(ON) MAX ID MAXApplications5.5 mW @ 10 V Refer to Application Note AND8195/D30 V66 A9.5 mW @ 4.5
Другие MOSFET... NTMFS4825NFET1G , NTMFS4833NST1G , NTMFS4833NT1G , NTMFS4834NT1G , NTMFS4835NT1G , NTMFS4836NT1G , NTMFS4837NHT1G , NTMFS4837NT1G , IRF520 , NTMFS4839NT1G , NTMFS4841NHT1G , NTMFS4841NT1G , NTMFS4845NT1G , NTMFS4846NT1G , NTMFS4847NAT1G , NTMFS4847NT1G , NTMFS4849NT1G .
History: SVS11N60KD2 | AON6932 | SVS60R190SD4 | SVT044R5ND | ISP80N08S2L | IXTK102N65X2 | AO8820
History: SVS11N60KD2 | AON6932 | SVS60R190SD4 | SVT044R5ND | ISP80N08S2L | IXTK102N65X2 | AO8820



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