NTMFS4921NT1G Datasheet and Replacement
Type Designator: NTMFS4921NT1G
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.87
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id|ⓘ - Maximum Drain Current: 8.8
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 38
nS
Cossⓘ -
Output Capacitance: 282
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00695
Ohm
Package:
SO-8FL
- MOSFET Cross-Reference Search
NTMFS4921NT1G Datasheet (PDF)
..1. Size:105K onsemi
ntmfs4921nt1g.pdf 
NTMFS4921NPower MOSFET30 V, 58.5 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Thermally Enhanced SO-8 Package These are Pb-Free DeviceV(BR)DSS RDS(ON) MAX ID MAXApplications6.95 mW @ 10 V CPU Power Delivery3
4.1. Size:117K onsemi
ntmfs4921n.pdf 
NTMFS4921NPower MOSFET30 V, 58.5 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Thermally Enhanced SO-8 Package These are Pb-Free DeviceV(BR)DSS RDS(ON) MAX ID MAXApplications6.95 mW @ 10 V CPU Power Delivery3
6.1. Size:110K onsemi
ntmfs4927nct1g ntmfs4927nt1g.pdf 
NTMFS4927N,NTMFS4927NCPower MOSFET30 V, 38 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAXCom
6.2. Size:112K onsemi
ntmfs4927-d.pdf 
NTMFS4927NPower MOSFET30 V, 38 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant9.0 m
6.3. Size:108K onsemi
ntmfs4926nt1g.pdf 
NTMFS4926NPower MOSFET30 V, 44 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant7.0 m
6.4. Size:171K onsemi
ntmfs4925n.pdf 
NTMFS4925NMOSFET Power, Single,N-Channel, SO-8 FL30 V, 48 AFeatures Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX Optimized for 5 V, 12 V Gate Drives5.6 mW @ 10 V These Devices are Pb-Free, Halogen Free/BFR Free and are R
6.5. Size:108K onsemi
ntmfs4925nt1g.pdf 
NTMFS4925NPower MOSFET30 V, 48 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant5.6 m
6.6. Size:171K onsemi
ntmfs4927n ntmfs4927nc.pdf 
NTMFS4927N,NTMFS4927NCMOSFET Power, Single,N-Channel, SO-8 FL30 V, 38 AFeatureshttp://onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX Optimized for 5 V, 12 V Gate Drives7.3 mW @ 10 V30 V 38 A These Devices are Pb-Free, Haloge
6.7. Size:127K onsemi
ntmfs4926n.pdf 
NTMFS4926NMOSFET Power, Single,N-Channel, SO-8 FL30 V, 44 AFeatures Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX Optimized for 5 V, 12 V Gate Drives7.0 mW @ 10 V These Devices are Pb-Free, Halogen Free/BFR Free and are R
6.8. Size:139K onsemi
ntmfs4925ne.pdf 
NTMFS4925NEPower MOSFET30 V, 48 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Dual Sided Cooling Capability Optimized for 5 V, 12 V Gate DrivesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR
6.9. Size:119K onsemi
ntmfs4923ne.pdf 
NTMFS4923NEPower MOSFET30 V, 91 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Dual Sided Cooling CapabilityV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free and are RoHS Compliant3.3 mW @ 10 V 91 A
6.10. Size:108K onsemi
ntmfs4926ne.pdf 
NTMFS4926NEPower MOSFET30 V, 44 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Dual Sided Cooling Capability Optimized for 5 V, 12 V Gate DrivesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR
6.11. Size:110K onsemi
ntmfs4922ne.pdf 
NTMFS4922NEPower MOSFET30 V, 147 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Dual Sided Cooling CapabilityV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant2.0 mW @
6.12. Size:112K onsemi
ntmfs4926n-d.pdf 
NTMFS4926NPower MOSFET30 V, 44 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant7.0 m
6.13. Size:112K onsemi
ntmfs4925n-d.pdf 
NTMFS4925NPower MOSFET30 V, 48 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant6.0 m
6.14. Size:108K onsemi
ntmfs4923net1g.pdf 
NTMFS4923NEPower MOSFET30 V, 91 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Dual Sided Cooling CapabilityV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free and are RoHS Compliant3.3 mW @ 10 V 91 A
Datasheet: FQT7N10L
, FDP083N15A
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, FDP075N15A
, FQU11P06
, FQU12N20
, FDPF085N10A
, FQU13N06L
, IRFZ44
, FDB86102LZ
, FQU17P06
, FQU1N60C
, FDP085N10A
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, FQU2N100
, FQU2N60C
, FDMC8030
.
History: MCH3484
| DMN30H4D0L
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