NTMFS4921NT1G - параметры транзистора MOSFET, его аналоги, datasheet

NTMFS4921NT1G MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

   Наименование прибора: NTMFS4921NT1G
   Маркировка: 4921N
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.87 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 8.8 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 10.7 nC
   trⓘ - Время нарастания: 38 ns
   Cossⓘ - Выходная емкость: 282 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.00695 Ohm
   Тип корпуса: SO-8FL

Аналог (замена) для NTMFS4921NT1G

NTMFS4921NT1G Datasheet (PDF)

..1. Size:105K onsemi
ntmfs4921nt1g.pdf

NTMFS4921NPower MOSFET30 V, 58.5 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Thermally Enhanced SO-8 Package These are Pb-Free DeviceV(BR)DSS RDS(ON) MAX ID MAXApplications6.95 mW @ 10 V CPU Power Delivery3

4.1. Size:117K onsemi
ntmfs4921n.pdf

6.1. Size:110K onsemi
ntmfs4927nct1g ntmfs4927nt1g.pdf

NTMFS4927N,NTMFS4927NCPower MOSFET30 V, 38 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAXCom

6.2. Size:112K onsemi
ntmfs4927-d.pdf

NTMFS4927NPower MOSFET30 V, 38 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant9.0 m

6.3. Size:108K onsemi
ntmfs4926nt1g.pdf

NTMFS4926NPower MOSFET30 V, 44 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant7.0 m

6.4. Size:171K onsemi
ntmfs4925n.pdf

NTMFS4925NMOSFET Power, Single,N-Channel, SO-8 FL30 V, 48 AFeatures Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX Optimized for 5 V, 12 V Gate Drives5.6 mW @ 10 V These Devices are Pb-Free, Halogen Free/BFR Free and are R

6.5. Size:108K onsemi
ntmfs4925nt1g.pdf

NTMFS4925NPower MOSFET30 V, 48 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant5.6 m

6.6. Size:171K onsemi
ntmfs4927n ntmfs4927nc.pdf

NTMFS4927N,NTMFS4927NCMOSFET Power, Single,N-Channel, SO-8 FL30 V, 38 AFeatureshttp://onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX Optimized for 5 V, 12 V Gate Drives7.3 mW @ 10 V30 V 38 A These Devices are Pb-Free, Haloge

6.7. Size:127K onsemi
ntmfs4926n.pdf

NTMFS4926NMOSFET Power, Single,N-Channel, SO-8 FL30 V, 44 AFeatures Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX Optimized for 5 V, 12 V Gate Drives7.0 mW @ 10 V These Devices are Pb-Free, Halogen Free/BFR Free and are R

6.8. Size:139K onsemi
ntmfs4925ne.pdf

NTMFS4925NEPower MOSFET30 V, 48 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Dual Sided Cooling Capability Optimized for 5 V, 12 V Gate DrivesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR

6.9. Size:119K onsemi
ntmfs4923ne.pdf

NTMFS4923NEPower MOSFET30 V, 91 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Dual Sided Cooling CapabilityV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free and are RoHS Compliant3.3 mW @ 10 V 91 A

6.10. Size:108K onsemi
ntmfs4926ne.pdf

NTMFS4926NEPower MOSFET30 V, 44 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Dual Sided Cooling Capability Optimized for 5 V, 12 V Gate DrivesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR

6.11. Size:110K onsemi
ntmfs4922ne.pdf

NTMFS4922NEPower MOSFET30 V, 147 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Dual Sided Cooling CapabilityV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant2.0 mW @

6.12. Size:112K onsemi
ntmfs4926n-d.pdf