All MOSFET. NTMFS4941NT1G Datasheet

 

NTMFS4941NT1G Datasheet and Replacement


   Type Designator: NTMFS4941NT1G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.91 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 570 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0062 Ohm
   Package: SO-8FL
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NTMFS4941NT1G Datasheet (PDF)

 ..1. Size:108K  onsemi
ntmfs4941nt1g.pdf pdf_icon

NTMFS4941NT1G

NTMFS4941NPower MOSFET30 V, 47 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXApplications6.2 mW @ 10 V30 V 47 A CP

 4.1. Size:146K  onsemi
ntmfs4941n.pdf pdf_icon

NTMFS4941NT1G

NTMFS4941NPower MOSFET30 V, 47 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXApplications 6.2 mW @ 10 V30 V 47 A CPU

 6.1. Size:108K  onsemi
ntmfs4943nt1g.pdf pdf_icon

NTMFS4941NT1G

NTMFS4943NPower MOSFET30 V, 41 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXApplications7.2 mW @ 10 V CPU Power Deli

 6.2. Size:105K  onsemi
ntmfs4946n.pdf pdf_icon

NTMFS4941NT1G

NTMFS4946NPower MOSFET30 V, 100 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Thermally Enhanced SO8 Package These are Pb-Free DeviceV(BR)DSS RDS(ON) MAX ID MAXApplications3.4 mW @ 10 V CPU Power Delivery30 V

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SIS332DN | IRFB3004GPBF | BRCS200P03DP | UT40N04 | FHP80N07B | TSM4424CS | LKK47-06C5

Keywords - NTMFS4941NT1G MOSFET datasheet

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