NTMFS4941NT1G Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: NTMFS4941NT1G
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 0.91 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 9 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 22 ns
Cossⓘ - Выходная емкость: 570 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0062 Ohm
Тип корпуса: SO-8FL
- подбор MOSFET транзистора по параметрам
NTMFS4941NT1G Datasheet (PDF)
ntmfs4941nt1g.pdf

NTMFS4941NPower MOSFET30 V, 47 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXApplications6.2 mW @ 10 V30 V 47 A CP
ntmfs4941n.pdf

NTMFS4941NPower MOSFET30 V, 47 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXApplications 6.2 mW @ 10 V30 V 47 A CPU
ntmfs4943nt1g.pdf

NTMFS4943NPower MOSFET30 V, 41 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXApplications7.2 mW @ 10 V CPU Power Deli
ntmfs4946n.pdf

NTMFS4946NPower MOSFET30 V, 100 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Thermally Enhanced SO8 Package These are Pb-Free DeviceV(BR)DSS RDS(ON) MAX ID MAXApplications3.4 mW @ 10 V CPU Power Delivery30 V
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: IRFD010 | IRF2804SPBF | NDT6N70 | AP9997AGH-HF | APT53N60BC6 | IPD50R280CE | FCP125N60E
History: IRFD010 | IRF2804SPBF | NDT6N70 | AP9997AGH-HF | APT53N60BC6 | IPD50R280CE | FCP125N60E



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