All MOSFET. NTMS10P02R2G Datasheet

 

NTMS10P02R2G Datasheet and Replacement


   Type Designator: NTMS10P02R2G
   Marking Code: E10P02
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
   |Id| ⓘ - Maximum Drain Current: 8.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 48 nC
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 1100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: SOIC-8
 

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NTMS10P02R2G Datasheet (PDF)

 ..1. Size:175K  onsemi
 ntms10p02r2 ntms10p02r2g.pdf pdf_icon

NTMS10P02R2G

NTMS10P02R2Power MOSFET-10 Amps, -20 VoltsP-Channel Enhancement-ModeSingle SOIC-8 PackageFeatureshttp://onsemi.com Ultra Low RDS(on) Higher Efficiency Extending Battery Life-10 AMPERES Logic Level Gate Drive-20 VOLTS Miniature SOIC-8 Surface Mount Package14 mW @ VGS = -4.5 V Diode Exhibits High Speed, Soft RecoveryP-Channel Avalanche Energy Spec

 ..2. Size:898K  cn vbsemi
 ntms10p02r2g.pdf pdf_icon

NTMS10P02R2G

NTMS10P02R2Gwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definitiona0.015 at VGS = - 4.5 V TrenchFET Power MOSFET- 13a 100 % Rg Tested0.026 at VGS = - 2.5 V - 20 20 nC- 10 Built in ESD Protection with Zener Diode0.065 at VGS = - 1.8 V - 8 Typi

 3.1. Size:175K  onsemi
 ntms10p02r2.pdf pdf_icon

NTMS10P02R2G

NTMS10P02R2Power MOSFET-10 Amps, -20 VoltsP-Channel Enhancement-ModeSingle SOIC-8 PackageFeatureshttp://onsemi.com Ultra Low RDS(on) Higher Efficiency Extending Battery Life-10 AMPERES Logic Level Gate Drive-20 VOLTS Miniature SOIC-8 Surface Mount Package14 mW @ VGS = -4.5 V Diode Exhibits High Speed, Soft RecoveryP-Channel Avalanche Energy Spec

 3.2. Size:1661K  kexin
 ntms10p02r2.pdf pdf_icon

NTMS10P02R2G

SMD Type MOSFETP-Channel MOSFETNTMS10P02R2 (KTMS10P02R2)SOP-8 Features VDS (V) =-20V ID =-10 A (VGS =-10V)1.50 0.15 RDS(ON) 14 m (VGS =-4.5V) RDS(ON) 20m (VGS =-2.5V) Diode Exhibits High Speed, Soft Recovery 1 Source 5 Drain6 Drain2 Source7 Drain3 SourceD8 Drain4 GateGS Absolute Maximum Ratings Ta = 25Parameter S

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Datasheet: NTMFS5C442NLT , NTMFS5C604NL , NTMFS5C612NL , NTMFS5C646NL , NTMFS5C670NL , NTMFS6B03N , NTMFS6B05N , NTMFS6B14N , IRF530 , NTMS3P03R2 , NTMS4101PR2 , NTMS4107NR2G , NTMS4176PR2G , NTMS4177PR2G , NTMS4404NR2 , NTMS4503NR2 , NTMS4700NR2 .

History: AMF924NE | SIR640ADP

Keywords - NTMS10P02R2G MOSFET datasheet

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