NTMS10P02R2G datasheet, подбор замены

 ..1. Size:175K  onsemi
 ntms10p02r2 ntms10p02r2g.pdf 

NTMS10P02R2 Power MOSFET -10 Amps, -20 Volts P-Channel Enhancement-Mode Single SOIC-8 Package Features http //onsemi.com Ultra Low RDS(on) Higher Efficiency Extending Battery Life -10 AMPERES Logic Level Gate Drive -20 VOLTS Miniature SOIC-8 Surface Mount Package 14 mW @ VGS = -4.5 V Diode Exhibits High Speed, Soft Recovery P-Channel Avalanche Energy Spec

 ..2. Size:898K  cn vbsemi
 ntms10p02r2g.pdf 

NTMS10P02R2G www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition a 0.015 at VGS = - 4.5 V TrenchFET Power MOSFET - 13 a 100 % Rg Tested 0.026 at VGS = - 2.5 V - 20 20 nC - 10 Built in ESD Protection with Zener Diode 0.065 at VGS = - 1.8 V - 8 Typi

 3.1. Size:175K  onsemi
 ntms10p02r2.pdf 

NTMS10P02R2 Power MOSFET -10 Amps, -20 Volts P-Channel Enhancement-Mode Single SOIC-8 Package Features http //onsemi.com Ultra Low RDS(on) Higher Efficiency Extending Battery Life -10 AMPERES Logic Level Gate Drive -20 VOLTS Miniature SOIC-8 Surface Mount Package 14 mW @ VGS = -4.5 V Diode Exhibits High Speed, Soft Recovery P-Channel Avalanche Energy Spec

 3.2. Size:1661K  kexin
 ntms10p02r2.pdf 

SMD Type MOSFET P-Channel MOSFET NTMS10P02R2 (KTMS10P02R2) SOP-8 Features VDS (V) =-20V ID =-10 A (VGS =-10V) 1.50 0.15 RDS(ON) 14 m (VGS =-4.5V) RDS(ON) 20m (VGS =-2.5V) Diode Exhibits High Speed, Soft Recovery 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source D 8 Drain 4 Gate G S Absolute Maximum Ratings Ta = 25 Parameter S