All MOSFET. NTMS3P03R2 Datasheet

 

NTMS3P03R2 Datasheet and Replacement


   Type Designator: NTMS3P03R2
   Marking Code: E3P03
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.73 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 2.34 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 16 nC
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 170 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
   Package: SOIC-8
 

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NTMS3P03R2 Datasheet (PDF)

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NTMS3P03R2

NTMS3P03R2Power MOSFET-3.05 Amps, -30 VoltsP-Channel SOIC-8http://onsemi.comFeatures High Efficiency Components in a Single SOIC-8 Package-3.05 AMPERES High Density Power MOSFET with Low RDS(on)-30 VOLTS Miniature SOIC-8 Surface Mount Package - Saves Board Space0.085 W @ VGS = -10 V Diode Exhibits High Speed with Soft Recovery IDSS Specified at Elevated

Datasheet: NTMFS5C604NL , NTMFS5C612NL , NTMFS5C646NL , NTMFS5C670NL , NTMFS6B03N , NTMFS6B05N , NTMFS6B14N , NTMS10P02R2G , AON7506 , NTMS4101PR2 , NTMS4107NR2G , NTMS4176PR2G , NTMS4177PR2G , NTMS4404NR2 , NTMS4503NR2 , NTMS4700NR2 , NTMS4705NR2G .

History: HYG060P04LQ1V

Keywords - NTMS3P03R2 MOSFET datasheet

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