All MOSFET. NTMS3P03R2 Datasheet

 

NTMS3P03R2 Datasheet and Replacement


   Type Designator: NTMS3P03R2
   Marking Code: E3P03
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.73 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 2.34 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 16 nC
   trⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 170 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
   Package: SOIC-8
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NTMS3P03R2 Datasheet (PDF)

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NTMS3P03R2

NTMS3P03R2Power MOSFET-3.05 Amps, -30 VoltsP-Channel SOIC-8http://onsemi.comFeatures High Efficiency Components in a Single SOIC-8 Package-3.05 AMPERES High Density Power MOSFET with Low RDS(on)-30 VOLTS Miniature SOIC-8 Surface Mount Package - Saves Board Space0.085 W @ VGS = -10 V Diode Exhibits High Speed with Soft Recovery IDSS Specified at Elevated

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History: AMR492N | AFN7412 | IPP35CN10N

Keywords - NTMS3P03R2 MOSFET datasheet

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