NTMS4801NR2G
MOSFET. Datasheet pdf. Equivalent
Type Designator: NTMS4801NR2G
Marking Code: 4801N
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.8
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 7.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 12.2
nC
trⓘ - Rise Time: 3.7
nS
Cossⓘ -
Output Capacitance: 288
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009
Ohm
Package:
SO-8
NTMS4801NR2G
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTMS4801NR2G
Datasheet (PDF)
..1. Size:131K onsemi
ntms4801nr2g.pdf 
NTMS4801NPower MOSFET30 V, 12 A, N-Channel, SO-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses This is a Pb-Free DeviceV(BR)DSS RDS(ON) MAX ID MAXApplications9.0 mW @ 10 V30 V 12 A DC-DC Converters12.5 mW @ 4.5 V Synchronous MOSFET
5.1. Size:135K onsemi
ntms4801n.pdf
NTMS4801NPower MOSFET30 V, 12 A, N-Channel, SO-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses This is a Pb-Free DeviceV(BR)DSS RDS(ON) MAX ID MAXApplications9.0 mW @ 10 V30 V 12 A DC-DC Converters12.5 mW @ 4.5 V Synchronous MOSFET
7.1. Size:88K onsemi
ntms4807n-d ntms4807nr2g.pdf
NTMS4807NPower MOSFET30 V, 14.8 A, N-Channel, SO-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com This is a Pb-Free DeviceV(BR)DSS RDS(ON) MAX ID MAXApplications6.1 mW @ 10 V Disk Drives30 V 14.8 A DC-DC Converters 7.5 mW @ 4.5 V Pri
7.2. Size:111K onsemi
ntms4802n ntms4802nr2g.pdf
NTMS4802NPower MOSFET30 V, 18 A, N-Channel, SO-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses This is a Pb-Free DeviceV(BR)DSS RDS(ON) MAX ID MAXApplications4.0 mW @ 10 V30 V 18 A DC-DC Converters5.5 mW @ 4.5 V Synchronous MOSFET
7.3. Size:136K onsemi
ntms4800n.pdf
NTMS4800NPower MOSFET30 V, 8 A, N-Channel, SOIC-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses SOIC-8 Surface Mount Package Saves Board SpaceV(BR)DSS RDS(ON) MAX ID MAX This is a Pb-Free Device20 mW @ 10 VApplications30 V 8 A27 mW @ 4.5 V
7.4. Size:132K onsemi
ntms4800nr2g.pdf
NTMS4800NPower MOSFET30 V, 8 A, N-Channel, SOIC-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses SOIC-8 Surface Mount Package Saves Board SpaceV(BR)DSS RDS(ON) MAX ID MAX This is a Pb-Free Device20 mW @ 10 VApplications30 V 8 A27 mW @ 4.5 V
7.5. Size:88K onsemi
ntms4807n.pdf
NTMS4807NPower MOSFET30 V, 14.8 A, N-Channel, SO-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com This is a Pb-Free DeviceV(BR)DSS RDS(ON) MAX ID MAXApplications6.1 mW @ 10 V Disk Drives30 V 14.8 A DC-DC Converters 7.5 mW @ 4.5 V Pri
Datasheet: FMP36-015P
, FMP76-01T
, GMM3x100-01X1-SMD
, FDMS0306AS
, GMM3x120-0075X2-SMD
, FDMS0300S
, GMM3x160-0055X2-SMD
, FDMC7200S
, STP80NF70
, FDMC7200
, GMM3x60-015X2-SMD
, FDMC0310AS
, GWM100-0085X1-SL
, FDMS3610S
, GWM100-0085X1-SMD
, FDMS3606S
, GWM100-01X1-SL
.
