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NTMS5835NLR2G Spec and Replacement


   Type Designator: NTMS5835NLR2G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 9.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 315 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: SO-8

 NTMS5835NLR2G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NTMS5835NLR2G Specs

 ..1. Size:105K  onsemi
 ntms5835nlr2g.pdf pdf_icon

NTMS5835NLR2G

NTMS5835NL Power MOSFET 40 V, 12 A, 10 mW Features Low RDS(on) Low Capacitance http //onsemi.com Optimized Gate Charge These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise stated) 10 mW @ 10 V 40 V 12 A Parameter Symbol Value Unit 14 mW @ 4.5 V Drain-to-Source Voltage VDSS... See More ⇒

 4.1. Size:116K  onsemi
 ntms5835nl.pdf pdf_icon

NTMS5835NLR2G

NTMS5835NL Power MOSFET 40 V, 12 A, 10 mW Features Low RDS(on) Low Capacitance http //onsemi.com Optimized Gate Charge These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise stated) 10 mW @ 10 V 40 V 12 A Parameter Symbol Value Unit 14 mW @ 4.5 V Drain-to-Source Voltage VDSS... See More ⇒

 7.1. Size:105K  onsemi
 ntms5838nlr2g.pdf pdf_icon

NTMS5835NLR2G

NTMS5838NL Power MOSFET 40 V, 7.5 A, 20 mW Features Low RDS(on) Low Capacitance http //onsemi.com Optimized Gate Charge These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise stated) 20 mW @ 10 V 40 V 7.5 A Parameter Symbol Value Unit 36.5 mW @ 4.5 V Drain-to-Source Voltage ... See More ⇒

 7.2. Size:115K  onsemi
 ntms5838nl.pdf pdf_icon

NTMS5835NLR2G

NTMS5838NL Power MOSFET 40 V, 7.5 A, 25 mW Features Low RDS(on) Low Capacitance http //onsemi.com Optimized Gate Charge These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise stated) 25 mW @ 10 V 40 V 7.5 A Parameter Symbol Value Unit 30.8 mW @ 4.5 V Drain-to-Source Voltage ... See More ⇒

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Detailed specifications: NTMS4872NR2G , NTMS4873NFR2G , NTMS4916NR2G , NTMS4917NR2G , NTMS4937NR2G , NTMS4939NR2G , NTMS4N01R2G , NTMS4P01R2 , STF13NM60N , NTMS5838NLR2G , NTMS5P02R2G , NTMS5P02R2SG , NTMS7N03R2G , NTMSD2P102LR2 , NTMSD3P102R2 , NTMSD6N303R2 , NTNS3164NZ .

History: DMG9N65CT | ZXM64P02XTA | NTP4302 | NTP45N06

Keywords - NTMS5835NLR2G MOSFET specs

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