NTP30N06L
MOSFET. Datasheet pdf. Equivalent
Type Designator: NTP30N06L
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 88.2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 30
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 16
nC
trⓘ - Rise Time: 200
nS
Cossⓘ -
Output Capacitance: 260
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.046
Ohm
Package:
TO-220
NTP30N06L
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTP30N06L
Datasheet (PDF)
..1. Size:75K onsemi
ntb30n06l ntp30n06l ntp30n06l ntb30n06l.pdf
NTP30N06L, NTB30N06LPower MOSFET30 Amps, 60 Volts, Logic Level,N-Channel TO-220 and D2PAKDesigned for low voltage, high speed switching applications inhttp://onsemi.compower supplies, converters and power motor controls and bridgecircuits.30 AMPERES, 60 VOLTSFeaturesRDS(on) = 46 mW Pb-Free Packages are AvailableN-ChannelDTypical Applications Power Supplies
6.1. Size:78K onsemi
ntb30n06g ntp30n06 ntp30n06 ntb30n06.pdf
NTP30N06, NTB30N06Power MOSFET30 Amps, 60 VoltsN-Channel TO-220 and D2PAKDesigned for low voltage, high speed switching applications inhttp://onsemi.compower supplies, converters and power motor controls and bridgecircuits.30 AMPERES, 60 VOLTSFeaturesRDS(on) = 42 mW Pb-Free Packages are AvailableN-ChannelDTypical Applications Power Supplies ConvertersG
8.1. Size:158K onsemi
ntp30n20 ntp30n20g.pdf
NTP30N20Preferred DevicePower MOSFET30 Amps, 200 VoltsN-Channel Enhancement-Mode TO-220http://onsemi.comFeatures Source-to-Drain Diode Recovery Time Comparable to a Discrete30 AMPERESFast Recovery Diode200 VOLTS Avalanche Energy Specified68 mW @ VGS = 10 V (Typ) IDSS and RDS(on) Specified at Elevated Temperature Pb-Free Package is Available*N-ChannelD
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