All MOSFET. NTP30N20G Datasheet

 

NTP30N20G Datasheet and Replacement


   Type Designator: NTP30N20G
   Marking Code: 30N20G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 214 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 75 nC
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 380 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.081 Ohm
   Package: TO-220
 

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NTP30N20G Datasheet (PDF)

 ..1. Size:158K  onsemi
 ntp30n20 ntp30n20g.pdf pdf_icon

NTP30N20G

NTP30N20Preferred DevicePower MOSFET30 Amps, 200 VoltsN-Channel Enhancement-Mode TO-220http://onsemi.comFeatures Source-to-Drain Diode Recovery Time Comparable to a Discrete30 AMPERESFast Recovery Diode200 VOLTS Avalanche Energy Specified68 mW @ VGS = 10 V (Typ) IDSS and RDS(on) Specified at Elevated Temperature Pb-Free Package is Available*N-ChannelD

 8.1. Size:75K  onsemi
 ntb30n06l ntp30n06l ntp30n06l ntb30n06l.pdf pdf_icon

NTP30N20G

NTP30N06L, NTB30N06LPower MOSFET30 Amps, 60 Volts, Logic Level,N-Channel TO-220 and D2PAKDesigned for low voltage, high speed switching applications inhttp://onsemi.compower supplies, converters and power motor controls and bridgecircuits.30 AMPERES, 60 VOLTSFeaturesRDS(on) = 46 mW Pb-Free Packages are AvailableN-ChannelDTypical Applications Power Supplies

 8.2. Size:78K  onsemi
 ntb30n06g ntp30n06 ntp30n06 ntb30n06.pdf pdf_icon

NTP30N20G

NTP30N06, NTB30N06Power MOSFET30 Amps, 60 VoltsN-Channel TO-220 and D2PAKDesigned for low voltage, high speed switching applications inhttp://onsemi.compower supplies, converters and power motor controls and bridgecircuits.30 AMPERES, 60 VOLTSFeaturesRDS(on) = 42 mW Pb-Free Packages are AvailableN-ChannelDTypical Applications Power Supplies ConvertersG

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