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NTP5863NG Spec and Replacement


   Type Designator: NTP5863NG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 97 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 34 nS
   Cossⓘ - Output Capacitance: 350 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0078 Ohm
   Package: TO-220

 NTP5863NG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NTP5863NG Specs

 ..1. Size:100K  onsemi
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NTP5863NG

NTP5863N N-Channel Power MOSFET 60 V, 97 A, 7.8 mW Features Low RDS(on) High Current Capability http //onsemi.com 100% Avalanche Tested These Devices are Pb-Free, Halogen Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX 60 V 7.8 mW @ 10 V 97 A MAXIMUM RATINGS (TJ = 25 C Unless otherwise specified) Parameter Symbol Value Unit D Drain-to-Source Voltage VDSS 6... See More ⇒

 8.1. Size:101K  onsemi
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NTP5863NG

NTP5864N Power MOSFET 60 V, 63 A, 12.4 mW Features Low RDS(on) High Current Capability http //onsemi.com Avalanche Energy Specified ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX (Note 1) Compliant 60 V 12.4 m @ 10 V 63 A MAXIMUM RATINGS (TJ = 25 C unless otherwise stated) N-Channel Parameter Symbol Value Units D Dra... See More ⇒

 8.2. Size:137K  onsemi
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NTP5863NG

NTD5862N, NTP5862N MOSFET Power, N-Channel 60 V, 98 A, 5.7 mW Features www.onsemi.com Low RDS(on) V(BR)DSS RDS(on) MAX ID MAX High Current Capability 60 V 5.7 mW @ 10 V 98 A 100% Avalanche Tested These Devices are Pb-Free, Halogen Free and are RoHS Compliant D MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) N-Channel Parameter Symbol Value Unit G Drain-t... See More ⇒

 8.3. Size:113K  onsemi
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NTP5863NG

NTB5860N, NTP5860N, NVB5860N N-Channel Power MOSFET 60 V, 220 A, 3.0 mW Features http //onsemi.com Low RDS(on) High Current Capability V(BR)DSS RDS(on) MAX ID MAX 100% Avalanche Tested 60 V 3.0 mW @ 10 V 220 A These Devices are Pb-Free, Halogen Free and are RoHS Compliant NVB Prefix for Automotive and Other Applications Requiring D Unique Site and Control Change... See More ⇒

Detailed specifications: NTP45N06 , NTP45N06L , NTP52N10 , NTP5404NRG , NTP5411NG , NTP5412NG , NTP5426NG , NTP5860N , 50N06 , NTP5864NG , NTP60N06 , NTP60N06L , NTP6410ANG , NTP6411ANG , NTP6412ANG , NTP6413ANG , NTP65N02R .

History: GWM13S65YRE | NTMS4939NR2G

Keywords - NTP5863NG MOSFET specs

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