NTP60N06L Datasheet and Replacement
Type Designator: NTP60N06L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 576 nS
Cossⓘ - Output Capacitance: 675 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
Package: TO-220
NTP60N06L substitution
NTP60N06L Datasheet (PDF)
ntb60n06l ntp60n06l ntp60n06l ntb60n06l.pdf

NTP60N06L, NTB60N06LPower MOSFET60 Amps, 60 Volts,Logic LevelN-Channel TO-220 and D2PAKhttp://onsemi.comDesigned for low voltage, high speed switching applications in60 AMPERES, 60 VOLTSpower supplies, converters, power motor controls and bridge circuits.RDS(on) = 16 mWFeaturesN-Channel Pb-Free Packages are AvailableDTypical Applications Power Supplies C
ntb60n06g ntp60n06 ntp60n06 ntb60n06.pdf

NTP60N06, NTB60N06Power MOSFET60 V, 60 A, N-ChannelTO-220 and D2PAKDesigned for low voltage, high speed switching applications inhttp://onsemi.compower supplies, converters and power motor controls and bridgecircuits.60 VOLTS, 60 AMPERESFeaturesRDS(on) = 14 mW Pb-Free Packages are AvailableN-ChannelDTypical Applications Power Supplies Converters Pow
ntp60n06.pdf

NTP60N06www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.011 at VGS = 10 V 60 Material categorization:600.012 at VGS = 4.5 V 50DTO-220ABGSDSGN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit
Datasheet: NTP5404NRG , NTP5411NG , NTP5412NG , NTP5426NG , NTP5860N , NTP5863NG , NTP5864NG , NTP60N06 , IRFP460 , NTP6410ANG , NTP6411ANG , NTP6412ANG , NTP6413ANG , NTP65N02R , NTP75N03-6G , NTP75N03L09 , NTP75N03R .
History: HSM4204
Keywords - NTP60N06L MOSFET datasheet
NTP60N06L cross reference
NTP60N06L equivalent finder
NTP60N06L lookup
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NTP60N06L replacement
History: HSM4204



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