NTP65N02R Datasheet. Specs and Replacement

Type Designator: NTP65N02R  📄📄 

Marking Code: 65N02R

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 62.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 58 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 2 V

Qg ⓘ - Total Gate Charge: 9.5 nC

tr ⓘ - Rise Time: 53 nS

Cossⓘ - Output Capacitance: 456 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm

Package: TO-220

NTP65N02R substitution

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NTP65N02R datasheet

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NTP65N02R

NTB65N02R, NTP65N02R Power MOSFET 65 A, 24 V N-Channel TO-220, D2PAK Features http //onsemi.com Planar HD3e Process for Fast Switching Performance Low RDSon to Minimize Conduction Loss V(BR)DSS RDS(on) TYP ID MAX Low Ciss to Minimize Driver Loss 24 V 8.4 mW @ 10 V 65 A Low Gate Charge Pb-Free Packages are Available* D MAXIMUM RATINGS (TJ = 25 C Unless otherwis... See More ⇒

Detailed specifications: NTP5863NG, NTP5864NG, NTP60N06, NTP60N06L, NTP6410ANG, NTP6411ANG, NTP6412ANG, NTP6413ANG, IRFP260N, NTP75N03-6G, NTP75N03L09, NTP75N03R, NTP75N06, NTP75N06L, NTP85N03, NTP8G202N, NTP8G206N

Keywords - NTP65N02R MOSFET specs

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