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NTP65N02R Spec and Replacement


   Type Designator: NTP65N02R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 62.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 58 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 53 nS
   Cossⓘ - Output Capacitance: 456 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
   Package: TO-220

 NTP65N02R Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NTP65N02R Specs

 ..1. Size:73K  onsemi
 ntb65n02r ntb65n02rt4 ntb65n02r ntp65n02r ntp65n02r.pdf pdf_icon

NTP65N02R

NTB65N02R, NTP65N02R Power MOSFET 65 A, 24 V N-Channel TO-220, D2PAK Features http //onsemi.com Planar HD3e Process for Fast Switching Performance Low RDSon to Minimize Conduction Loss V(BR)DSS RDS(on) TYP ID MAX Low Ciss to Minimize Driver Loss 24 V 8.4 mW @ 10 V 65 A Low Gate Charge Pb-Free Packages are Available* D MAXIMUM RATINGS (TJ = 25 C Unless otherwis... See More ⇒

Detailed specifications: NTP5863NG , NTP5864NG , NTP60N06 , NTP60N06L , NTP6410ANG , NTP6411ANG , NTP6412ANG , NTP6413ANG , IRFP260N , NTP75N03-6G , NTP75N03L09 , NTP75N03R , NTP75N06 , NTP75N06L , NTP85N03 , NTP8G202N , NTP8G206N .

Keywords - NTP65N02R MOSFET specs

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