NTP65N02R Datasheet and Replacement
Type Designator: NTP65N02R
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 62.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 58 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 53 nS
Cossⓘ - Output Capacitance: 456 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
Package: TO-220
NTP65N02R substitution
NTP65N02R Datasheet (PDF)
ntb65n02r ntb65n02rt4 ntb65n02r ntp65n02r ntp65n02r.pdf

NTB65N02R, NTP65N02RPower MOSFET65 A, 24 V N-ChannelTO-220, D2PAKFeatureshttp://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDSon to Minimize Conduction LossV(BR)DSS RDS(on) TYP ID MAX Low Ciss to Minimize Driver Loss24 V 8.4 mW @ 10 V 65 A Low Gate Charge Pb-Free Packages are Available*DMAXIMUM RATINGS (TJ = 25C Unless otherwis
Datasheet: NTP5863NG , NTP5864NG , NTP60N06 , NTP60N06L , NTP6410ANG , NTP6411ANG , NTP6412ANG , NTP6413ANG , 10N60 , NTP75N03-6G , NTP75N03L09 , NTP75N03R , NTP75N06 , NTP75N06L , NTP85N03 , NTP8G202N , NTP8G206N .
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