NTRV4101P Datasheet. Specs and Replacement
Type Designator: NTRV4101P 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.42 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 1.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12.6 nS
Cossⓘ - Output Capacitance: 100 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
Package: SOT-23
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NTRV4101P substitution
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NTRV4101P datasheet
ntrv4101p.pdf
NTR4101P, NTRV4101P Trench Power MOSFET -20 V, Single P-Channel, SOT-23 Features Leading -20 V Trench for Low RDS(on) -1.8 V Rated for Low Voltage Gate Drive www.onsemi.com www.onsemi.com SOT-23 Surface Mount for Small Footprint NTRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 V(BR)DSS RDS(ON) TYP ID MAX... See More ⇒
ntr4101p ntrv4101p.pdf
NTR4101P, NTRV4101P Trench Power MOSFET -20 V, Single P-Channel, SOT-23 Features Leading -20 V Trench for Low RDS(on) -1.8 V Rated for Low Voltage Gate Drive www.onsemi.com www.onsemi.com SOT-23 Surface Mount for Small Footprint NTRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 V(BR)DSS RDS(ON) TYP ID MAX... See More ⇒
ntr4101p ntrv4101p.pdf
Product specification NTR4101P, NTRV4101P Trench Power MOSFET V(BR)DSS RDS(ON) TYP ID MAX -20 V, Single P-Channel, SOT-23 70 mW @ -4.5 V Features -20 V 90 mW @ -2.5 V -3.2 A Leading -20 V Trench for Low RDS(on) 112 mW @ -1.8 V -1.8 V Rated for Low Voltage Gate Drive SOT-23 Surface Mount for Small Footprint P-Channel MOSFET NTRV Prefix for Automotive and Other Applic... See More ⇒
Detailed specifications: NTR4170NT1G, NTR4171PT1G, NTR4501NT1, NTR4502PT1, NTR4503NT1, NTR5103N, NTR5105P, NTR5198NL, AON6380, NTS2101PT1, NTS4001NT1, NTS4101PT1, NTS4172NT1G, NTS4173PT1G, NTS4409N, NTTD4401FR2, NTTFS3A08PZ
Keywords - NTRV4101P MOSFET specs
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