NTRV4101P
MOSFET. Datasheet pdf. Equivalent
Type Designator: NTRV4101P
Marking Code: TR4
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.42
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2
V
|Id|ⓘ - Maximum Drain Current: 1.8
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 7.5
nC
trⓘ - Rise Time: 12.6
nS
Cossⓘ -
Output Capacitance: 100
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.085
Ohm
Package:
SOT-23
NTRV4101P
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTRV4101P
Datasheet (PDF)
..1. Size:74K onsemi
ntrv4101p.pdf
NTR4101P, NTRV4101PTrench Power MOSFET-20 V, Single P-Channel, SOT-23Features Leading -20 V Trench for Low RDS(on) -1.8 V Rated for Low Voltage Gate Drivewww.onsemi.comwww.onsemi.com SOT-23 Surface Mount for Small Footprint NTRV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101V(BR)DSS RDS(ON) TYP ID MAX
..2. Size:78K onsemi
ntr4101p ntrv4101p.pdf
NTR4101P, NTRV4101PTrench Power MOSFET-20 V, Single P-Channel, SOT-23Features Leading -20 V Trench for Low RDS(on) -1.8 V Rated for Low Voltage Gate Drivewww.onsemi.comwww.onsemi.com SOT-23 Surface Mount for Small Footprint NTRV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101V(BR)DSS RDS(ON) TYP ID MAX
..3. Size:120K tysemi
ntr4101p ntrv4101p.pdf
Product specificationNTR4101P, NTRV4101PTrench Power MOSFETV(BR)DSS RDS(ON) TYP ID MAX-20 V, Single P-Channel, SOT-2370 mW @ -4.5 VFeatures-20 V 90 mW @ -2.5 V -3.2 A Leading -20 V Trench for Low RDS(on)112 mW @ -1.8 V -1.8 V Rated for Low Voltage Gate Drive SOT-23 Surface Mount for Small FootprintP-Channel MOSFET NTRV Prefix for Automotive and Other Applic
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