NTY100N10 PDF and Equivalents Search

 

NTY100N10 Specs and Replacement

Type Designator: NTY100N10

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 313 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 123 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 150 nS

Cossⓘ - Output Capacitance: 1800 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm

Package: TO-264

NTY100N10 substitution

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NTY100N10 datasheet

 ..1. Size:157K  onsemi
 nty100n10.pdf pdf_icon

NTY100N10

NTY100N10 Preferred Device Power MOSFET 123 A, 100 V N-Channel Enhancement-Mode TO264 Package http //onsemi.com Features 123 A, 100 V Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode 9 mW @ VGS = 10 V (Typ) Avalanche Energy Specified IDSS and RDS(on) Specified at Elevated Temperature N-Channel Pb-Free Package is Available* D Appl... See More ⇒

Detailed specifications: NTTFS4H05NTAG, NTTFS4H07N, NTTFS5116PLTAG, NTTFS5811NLTAG, NTTFS5820NLTAG, NTTFS5826NLTAG, NTTS2P02R2, NTTS2P03R2, STP65NF06, NTZD3154NT1G, NTZD3155CT1G, NTZS3151PT1G, 3SK290, AO4400, BUZ48, CEP6030L, CEB6030L

Keywords - NTY100N10 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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