All MOSFET. NTY100N10 Datasheet

 

NTY100N10 Datasheet and Replacement


   Type Designator: NTY100N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 313 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 123 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 150 nS
   Cossⓘ - Output Capacitance: 1800 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: TO-264
 

 NTY100N10 substitution

   - MOSFET ⓘ Cross-Reference Search

 

NTY100N10 Datasheet (PDF)

 ..1. Size:157K  onsemi
 nty100n10.pdf pdf_icon

NTY100N10

NTY100N10Preferred Device Power MOSFET 123 A,100 V N-ChannelEnhancement-Mode TO264Packagehttp://onsemi.comFeatures123 A, 100 V Source-to-Drain Diode Recovery Time Comparable to a DiscreteFast Recovery Diode9 mW @ VGS = 10 V (Typ) Avalanche Energy Specified IDSS and RDS(on) Specified at Elevated TemperatureN-Channel Pb-Free Package is Available*DAppl

Datasheet: NTTFS4H05NTAG , NTTFS4H07N , NTTFS5116PLTAG , NTTFS5811NLTAG , NTTFS5820NLTAG , NTTFS5826NLTAG , NTTS2P02R2 , NTTS2P03R2 , STP65NF06 , NTZD3154NT1G , NTZD3155CT1G , NTZS3151PT1G , 3SK290 , AO4400 , BUZ48 , CEP6030L , CEB6030L .

History: 2SK4075-ZK | IXTH240N15X4

Keywords - NTY100N10 MOSFET datasheet

 NTY100N10 cross reference
 NTY100N10 equivalent finder
 NTY100N10 lookup
 NTY100N10 substitution
 NTY100N10 replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 
Back to Top

 


 
.