All MOSFET. NTY100N10 Datasheet

 

NTY100N10 MOSFET. Datasheet pdf. Equivalent


   Type Designator: NTY100N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 313 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 123 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 200 nC
   trⓘ - Rise Time: 150 nS
   Cossⓘ - Output Capacitance: 1800 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: TO-264

 NTY100N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NTY100N10 Datasheet (PDF)

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 nty100n10.pdf

NTY100N10 NTY100N10

NTY100N10Preferred Device Power MOSFET 123 A,100 V N-ChannelEnhancement-Mode TO264Packagehttp://onsemi.comFeatures123 A, 100 V Source-to-Drain Diode Recovery Time Comparable to a DiscreteFast Recovery Diode9 mW @ VGS = 10 V (Typ) Avalanche Energy Specified IDSS and RDS(on) Specified at Elevated TemperatureN-Channel Pb-Free Package is Available*DAppl

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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